IXFT150N20T IXYS, IXFT150N20T Datasheet - Page 5

• Manufacturer Part Number: IXFT150N20T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFT150N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.015
• Ciss, Typ, (pf): 11700
• Qg, Typ, (nc): 177
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

© 2011 IXYS CORPORATION, All Rights Reserved
240
200
160
120
19
18
17
16
15
14
13
12
11
80
40
18
17
16
15
14
13
12
11
10
0
70
25
2
Fig. 17. Resistive Turn-off Switching Times vs.
t
R
V
t
V
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
T
f
r
DS
G
DS
DS
G
J
35
= 2Ω, V
80
= 2Ω , V
= 125ºC, V
4
= 100V
= 100V
= 100V
Fig. 13. Resistive Turn-on Rise Time vs.
45
GS
GS
90
t
t
6
I
d(off
d(on)
GS
D
= 10V
= 10V
= 150A
= 10V
)
55
- - - -
- - - -
Junction Temperature
100
T
Gate Resistance
8
Drain Current
J
- Degrees Centigrade
I
65
D
R
- Amperes
G
I
D
110
- Ohms
10
= 75A
75
I
120
D
12
I
= 150A
85
D
T
T
J
J
= 75A
= 125ºC
= 25ºC
130
14
95
105
140
16
115
150
18
75
70
65
60
55
50
45
40
35
130
110
90
70
50
30
10
125
240
200
160
120
24
20
16
12
18
17
16
15
14
13
12
11
10
80
40
8
4
0
25
70
2
Fig. 18. Resistive Turn-off Switching Times vs.
t
R
V
I
Fig. 16. Resistive Turn-off Switching Times vs.
f
D
G
DS
t
T
V
R
V
35
f
J
= 150A
DS
G
DS
= 2Ω, V
= 125ºC, V
= 100V
= 2Ω , V
4
80
= 100V
= 100V
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
GS
t
= 10V
d(off)
6
GS
90
t
d(off)
= 10V
55
Junction Temperature
= 10V
I
- - - -
D
T
- - - -
Gate Resistance
J
= 75A
- Degrees Centigrade
8
65
100
Drain Current
R
I
G
D
- Amperes
- Ohms
75
10
110
I
T
D
85
T
J
= 150A
J
= 125ºC
12
= 25ºC
120
95
IXFH150N20T
IXFT150N20T
14
105
I
130
D
= 75A
16
115
140
125
18
300
250
200
150
100
50
0
65
60
55
50
45
40
150