IXTQ88N28T IXYS, IXTQ88N28T Datasheet

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IXTQ88N28T

Manufacturer Part Number
IXTQ88N28T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTQ88N28T

Vdss, Max, (v)
280
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.044
Ciss, Typ, (pf)
5750
Qg, Typ, (nc)
138
Trr, Typ, (ns)
200
Trr, Max, (ns)
-
Pd, (w)
625
Rthjc, Max, (k/w)
0.20
Package Style
TO-3P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ88N28T
Manufacturer:
FSC
Quantity:
6 000
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
For Plasma Display Applications
Symbol
V
V
V
I
I
I
P
T
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DRMS
DM
© 2008 IXYS All rights reserved
GSS
DSS
J
JM
stg
DGR
GSM
D
SOLD
GS(th)
DSS
L
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Transient
T
External lead current limit
T
T
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Mounting torque
Test Conditions
V
V
V
V
V
V
C
C
C
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 0 V, I
= V
= ±20 V, V
= V
= 0 V
= 10 V, I
GS
DSS
, I
D
D
D
=1mA
= 1mA
= 0.5 • I
DS
= 0V
D25
GS
, Note1
= 1 MΩ
T
J
= 125°C
JM
IXTQ88N28T
280
Min. Typ.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
38
280
280
250
625
150
±30
300
260
5.5
88
75
±200
200
Max.
5.0
44
1
nA
μA
μA
°C
°C
°C
°C
W
°C
V
V
V
A
A
A
V
g
V
G = Gate
S = Source
Features
Advantages
TO-3P (IXTQ)
Trench gate construction for low R
International standard package
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
V
I
R
D25
G
DS(on)
DSS
D
S
=
=
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
280V
88A
44mΩ Ω Ω Ω Ω
DS99353B(01/08)
(TAB)
DS(on)

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IXTQ88N28T Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • I DS(on © 2008 IXYS All rights reserved IXTQ88N28T Maximum Ratings 280 = 1 MΩ 280 GS ± 250 JM 625 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 5.5 Characteristic Values Min. Typ. 280 3 125° ...

Page 2

... DSS D D25 40 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J Min. typ. JM 200 2.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTQ88N28T TO-3P (IXTQ) Outline Max 0.20 °C/W °C/W Max 250 A 1 μC 6,404,065 B1 ...

Page 3

... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V 3.4 GS 3.1 2.8 2.5 2.2 1.9 1.6 1 100 120 140 160 180 200 I - Amperes D © 2008 IXYS All rights reserved º C 200 180 160 140 120 6V 100 3.5 4 4.5 º C 3.1 2.8 2.5 6V 2.2 1.9 1.6 1.3 5V 0.7 0 ...

Page 4

... 1.2 1.4 1000 100 IXTQ88N28T Fig. 8. Transconductance º - º º 125 100 120 140 160 180 200 I - Amperes D Fig. 10. Gate Charge 140V 44A ...

Page 5

... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Second 0.1 1 DS99353B(01/08) ...

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