IXTQ88N28T IXYS, IXTQ88N28T Datasheet - Page 4

• Manufacturer Part Number: IXTQ88N28T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ88N28T

• Vdss, Max, (v): 280
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.044
• Ciss, Typ, (pf): 5750
• Qg, Typ, (nc): 138
• Trr, Typ, (ns): 200
• Trr, Max, (ns): -
• Pd, (w): 625
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-3P

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
160
140
120
100
100
240
210
180
150
120
80
60
40
20
10
90
60
30
0
0
3.5
0.4
0
f = 1MHz
5
T
4
J
0.6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 125
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
10
-40
J
25
4.5
= 125
º
º
º
C
C
C
0.8
V
15
V
º
V
G S
C
S D
D S
5
C rss
- Volts
C oss
- Volts
C iss
20
- Volts
5.5
1
T
J
25
= 25
º
6
1.2
C
30
6.5
35
1.4
40
7
1000
120
110
100
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
V
I
I
DS(on)
20
D
G
DS
= 44A
= 10mA
20
Fig. 8. Transconductance
= 140V
40
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
40
Q
60
T
J
G
= -40
125
I
- nanoCoulombs
80
D
V
25
60
- Amperes
D S
º
º
º
C
C
C
100 120 140 160 180 200
100
- Volts
IXTQ88N28T
80
100
T
T
J
C
100µs
25µs
= 150ºC
= 25ºC
120
1000
140