IXTQ88N28T IXYS, IXTQ88N28T Datasheet - Page 2

• Manufacturer Part Number: IXTQ88N28T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ88N28T

• Vdss, Max, (v): 280
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.044
• Ciss, Typ, (pf): 5750
• Qg, Typ, (nc): 138
• Trr, Typ, (ns): 200
• Trr, Max, (ns): -
• Pd, (w): 625
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-3P

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Notes:
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents:
f
S
SM
d(on)
d(off)
r
rr
fs
SD
iss
oss
rss
g(on)
gd
thJC
thCK
RM
gs
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100 A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A
= 100 V
= 5Ω (External)
= 10 V, I
= 10 V, V
= 0 V, V
= 15 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 220 V, I
4,835,592
4,850,072
4,881,106
D25
, Note 1
DSS
4,931,844
5,017,508
5,034,796
D
, I
= 44A
D
= 0.5 • I
(T
(T
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
JM
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
40
Characteristic Values
Characteristic Values
5750
0.25
Typ.
600
138
typ.
200
2.0
52
57
40
66
38
60
96
48
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.20 °C/W
250
1.5
88
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
μC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-3P (IXTQ) Outline
6,683,344
6,710,405 B2
6,710,463
IXTQ88N28T
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537