IXGN82N120B3H1 IXYS, IXGN82N120B3H1 Datasheet
IXGN82N120B3H1
Specifications of IXGN82N120B3H1
Related parts for IXGN82N120B3H1
IXGN82N120B3H1 Summary of contents
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... CES GE Note 0V ± 20V GES 82A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGN82N120B3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 145 64 42 550 41 750 = 2Ω 164 G CM ≤ V ...
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... Characteristic Values Min. Typ. 1. 150°C 1.90 J 200 = 100°C 24.6 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN82N120B3H1 SOT-227B miniBLOC (IXGN) Max 6 0.21 °C/W °C/W Max. 2 ...
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... T = 25ºC J 160 140 120 I = 164A 100 82A 40 20 41A IXGN82N120B3H1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V -50 -25 0 ...
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... C ies 140 120 100 C oes res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGN82N120B3H1 Fig. 8. Gate Charge V = 600V 82A 10mA 100 150 200 Q - NanoCoulombs G Fig ...
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... IXGN82N120B3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V ...
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... Fig. 21. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGN82N120B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 600V 125ºC, 25º ...