IXGN82N120B3H1 IXYS, IXGN82N120B3H1 Datasheet - Page 6

• Manufacturer Part Number: IXGN82N120B3H1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGN82N120B3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 145
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 42
• Rthjc, Max, Diode, (ºc/w): 0.42
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
110
100
160
140
120
100
1.000
0.100
0.010
90
80
70
60
50
40
30
20
80
60
40
20
25
0.0001
2
T
V
t
t
R
V
r i
J
3
CE
35
r i
CE
Switching Times vs. Junction Temperature
G
= 125ºC, V
= 600V
= 2Ω , V
= 600V
Switching Times vs. Gate Resistance
4
I
I
C
C
45
= 40A
= 80A
5
GE
GE
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
t
= 15V
d(on)
= 15V
t
55
d(on)
I
6
T
C
J
= 80A
- - - -
- Degrees Centigrade
- - - -
I
7
65
R
C
G
= 40A
- Ohms
8
0.001
75
9
85
10
11
95
Fig. 21. Maximum Transient Thermal Impedance
12
105
13
115
14
0.01
125
15
40
38
36
34
32
30
28
26
24
22
90
80
70
60
50
40
30
20
Pulse Width - Seconds
140
120
100
80
60
40
20
0
20
t
R
V
25
r i
G
CE
= 2Ω , V
= 600V
0.1
Switching Times vs. Collector Current
30
GE
35
t
= 15V
T
Fig. 19. Inductive Turn-on
d(on)
J
= 125ºC, 25ºC
40
- - - -
45
IXGN82N120B3H1
I
C
50
- Amperes
55
1
60
65
70
IXYS REF: G_82N120B3H1(8T)5-14-09
75
80
36
34
32
30
28
26
24
22
10