IXGN82N120B3H1 IXYS, IXGN82N120B3H1 Datasheet - Page 4

• Manufacturer Part Number: IXGN82N120B3H1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGN82N120B3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 145
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 42
• Rthjc, Max, Diode, (ºc/w): 0.42
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.000
0.100
0.010
0.001
100
100
90
80
70
60
50
40
30
20
10
0
0.0001
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
Fig. 9. Capacitance
15
I
0.001
V
C
80
CE
- Amperes
- Volts
20
C res
100
C oes
25
C ies
120
Fig. 11. Maximum Transient Thermal Impedance
T
J
= - 40ºC
125ºC
30
25ºC
140
35
160
0.01
Pulse Width - Seconds
180
40
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dV / dt < 10V / ns
300
C
G
CE
J
G
= 82A
= 10mA
= 125ºC
0.1
= 2Ω
= 600V
50
Fig. 10. Reverse-Bias Safe Operating Area
400
100
500
Fig. 8. Gate Charge
IXGN82N120B3H1
Q
600
G
150
- NanoCoulombs
V
CE
700
- Volts
200
800
1
900
250
1000
300
1100
1200
350
10