CM400HG-130H

Manufacturer Part NumberCM400HG-130H
ManufacturerPowerex Inc
TypeIGBT Module
CM400HG-130H datasheet
 

Specifications of CM400HG-130H

Prx AvailabilityRequestQuoteVoltage6500V
Current400ACircuit ConfigurationSingle
Rohs CompliantNo  
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Prepared by
Revision: A
K.Kurachi
Approved by
I.Umezaki Mar.-1-2011
rd
3
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM400HG-130H
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
COMPANY PROPRIETARY
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
●I
……………………… 400 A
C
●V
…………………… 6500 V
CES
●High Insulated Type
●1-element in a Pack
●AlSiC Baseplate
CM400HG-130H
INSULATED TYPE
Dimensions in mm
HVM-1045-A
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CM400HG-130H Summary of contents

  • Page 1

    ... WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION ●I ……………………… 400 A C ●V …………………… 6500 V CES ●High Insulated Type ●1-element in a Pack ●AlSiC Baseplate CM400HG-130H INSULATED TYPE Dimensions in mm HVM-1045 ...

  • Page 2

    ... V = ± Ω GE G(on 125 ° 150 nH (Note (Note µs , Inductive load (IGBT_off) MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE Ratings = -40 °C 5800 j = +25 °C 6300 j = +125 °C 6500 j ± 20 400 800 400 800 ...

  • Page 3

    ... M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw ° does not exceed T j rating (150°C). jmax x 0. (IGBT_off) MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 21.0 K/kW — — 33.0 K/kW — ...

  • Page 4

    ... 10 ∫ ic•vce dt Eon = – Qrr – Erec 10 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 90 50%I C 10%V 10 td(off) tf2 ∫ Eoff = tf = (0.9ic − 0.1ic) / (di/dt toff = td(off ∫ ∫ ...

  • Page 5

    ... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 600 Tj = 125°C 400 200 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL) = 20V 125° 25° Gate - Emitter Voltage [ 125° 25° ...

  • Page 6

    ... HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL Eoff Erec 1 0 800 1000 0 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 3600V 400A 25° Gate Charge [µ 3600V 400A ±15V 125°C ...

  • Page 7

    ... Tj = 125°C, Inductive load td(off) 10 td(on 10000 − [K/kW] τi [sec MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE = 3600V ±15V Ω Ω G(on) G(off) Irr trr 100 1000 10000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ ...

  • Page 8

    ... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL SHORT CIRCUIT SAFE OPERATING AREA 10000 8000 6000 4000 2000 0 6000 8000 6000 8000 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE (SCSOA) V ≤ 4500V ±15V 125°C, R ≥ 50 Ω G(off) 0 2000 ...