TLE 8386-2EL Infineon Technologies, TLE 8386-2EL Datasheet - Page 22

• Manufacturer Part Number: TLE 8386-2EL
• Manufacturer: Infineon Technologies

Specifications of TLE 8386-2EL

• Packages: PG-SSOP-14
• Comment: LS-sense-booster (prefered as voltage source);Can be used in SEPIC- or FLYBACK-configuration as wellMax. output current dependent on output voltage.
• Vq (max): adj (max 9-times of VS)
• Iq (max): -
• Iq (typ): 7,000.0 µA
• Output: Boost Converter

10.1.2
Power MOSFET selection:
The important parameters for the choice of the power MOSFET are:
•
•
•
•
•
It is recommended to choose a power MOSFET with a drain-source voltage rating V
the output voltage V
The power dissipation P
•
•
The first term in the equation above gives the conduction losses in the power MOSFET, the second term the
switching losses. To optimize the efficiency, R
Data Sheet
Drain-source voltage rating V
(D
On-resistance R
Maximum drain current I
Gate-to-source charge and gate-to-drain charge
Thermal resistance
C
I
BOOSTMAX
RSS
BOOST
= reverse transfer capacitance, please refer to power MOSFET data sheet
) forward voltage. During its off-time additional ringing across drain-to-source will occur.
Component Selection:
= maximum average current through the boost inductor L
P
LOSSFET
DSON
BO
.
LOSSFET
for efficiency reasons and power dissipation
=
DMAX
I
BOOSTMAX
in the power MOSFET can be calculated using the following formula:
DS
: The power MOSFET will see the full output voltage V
2
DSON
R
DSON
and C
20
+
RSS
2
should be minimized.
V
2
BO
I
BOOSTMAX
BOOST
.
DS
C
of at least 10 V higher than
Application Information
RSS
BO
plus the output diode
Rev. 1.0, 2010-10-25
f
------------- -
FREQ
TLE8386-2EL
1A