BTS 7930B Infineon Technologies, BTS 7930B Datasheet
BTS 7930B
Specifications of BTS 7930B
Related parts for BTS 7930B
BTS 7930B Summary of contents
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... Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17 4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20 5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 7 Package Outlines P-TO-263-7 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Data Sheet High Current PN Half Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 1 BTS 7930B Rev. 2.0, 2006-06-01 ...
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... The BTS 7930B provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. Basic Features • ...
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... Overview The BTS 7930B is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology ...
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... Figure 2 Terms Data Sheet INH BTS 7930B SR IS GND High Current PN Half Bridge BTS 7930B S OUT Rev. 2.0, 2006-06-01 Overview ...
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... Pin Configuration 2.1 Pin Assignment Figure 3 Pin Assignment BTS 7930B (top view) 2.2 Pin Definitions and Functions Pin Symbol 1 GND INH 4,8 OUT Bold type: pin needs power wiring Data Sheet BTS 7930B P-TO-263 I/O Function - Ground ...
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... °C -40 150 j T °C -55 150 stg V kV ESD - BTS 7930B Maximum Ratings Test Condition T < 85°C C switch active T < 85° 10ms pulse single pulse T < 85° 1kHz 50% T < 85° 20kHz 50% according to EIA/ JESD 22-A 114B Rev ...
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... S L Symbol Limit Values min. typ. max. V 5.5 – 28 – 2 VS(on) I – 7 VS(off) – – 7 BTS 7930B Unit Test Conditions INH Ω DC-mode normal operation (no fault condition µ INH ...
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... Power Stages The power stages of the BTS 7930B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes ...
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... V DS(HS) – 0.9 – 0.8 – 0.6 R ON(LS) – 18 – – – L(LKLS) – – V SD(LS) – 0.9 – 0.8 – 0.7 9 BTS 7930B Unit Test Conditions max. I mΩ OUT ° 150 ° µ INH OUT T < 85 ° µ ...
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... HS dr(HS) r(HS) ∆ • 0.5 LS df(LS) f(LS) Data Sheet Block Description and Characteristics ∆V OUT ∆V OUT 0.5 ) df(HS) f(HS 0.5 ). dr(LS) r(LS) 10 High Current PN Half Bridge BTS 7930B (HS) f (HS) ∆V OUT 10% to GND) load dr(LS) r(LS) ∆V OUT 10% to VS) load Rev. 2.0, 2006-06-01 90% t 90% t ...
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... OUT t – 11 f(HS) – 6 – df(HS) 1.2 2.4 – 3 BTS 7930B Unit Test Conditions µ Ω – = 5.1 kΩ kΩ SR V/µ Ω R – – = 5.1 kΩ – kΩ SR µ Ω – = 5.1 kΩ ...
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... OUT t – 11 f(LS) – 6 – df(LS) 2.2 4 – 5.6 6.4 16 25.4 12 BTS 7930B Unit Test Conditions µ Ω – = 5.1 kΩ kΩ SR V/µ Ω R – – = 5.1 kΩ – kΩ SR µ Ω – ...
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... Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 4.3.4 fault condition the BTS 7930B will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current I paragraph “ ...
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... CLS Low SideSwitch -40° 150° 1500 2000 dI /dt [A/ms High Current PN Half Bridge BTS 7930B shown in Figure -40° 25° CLL0 T = 150° 500 1000 1500 dI /dt [A/ms] L Rev. 2.0, 2006-06-01 ...
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... In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. That way of limiting the current has the advantage that the power dissipation in the BTS 7930B is much smaller than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e ...
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... I CLL0 115 CLS T 155 175 jSD T 150 – jSO ∆ T – – reset 16 BTS 7930B Unit Test Conditions max. V 5.5 V increasing S V 5.4 V decreasing S – V – V – V decreasing increasing S – V – =13 -40 ° ...
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... MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTS 7930B can be interfaced directly to a microcontroller. 4.4.2 ...
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... I IS Load Sense output I logic IS(lim) Figure 10 Sense current and fault current Data Sheet High Current PN Half Bridge Block Description and Characteristics Fault condition: error flag mode IS(lim) 18 BTS 7930B VS ESD-ZD IS Sense V R output IS IS logic Rev. 2.0, 2006-06-01 ...
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... X OFF OFF 1 1 OFF OFF 1 Status Flag IS Current sense mode 1 = Logic HIGH (error) 19 High Current PN Half Bridge BTS 7930B Mode IS Stand-by mode 0 LSS active HSS active Shut-down of LSS, HSS activated, error detected UV lockout Stand-by mode, reset of latch Shut-down with latch, ...
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... INHY I – 30 INH(H) I IN(H) I – 25 INH(L) I IN(L) k ILIS 4.2 6 3 IS(lim) I – – ISL I – 1 ISH 20 BTS 7930B Unit Test Conditions 2.15 V – 2 – V – – mV – – 150 µ 5 INH V V 125 µ INH kΩ ...
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... Junction-Ambient Note: Thermal characteristics are not subject to production test - specified by design. Data Sheet Symbol R thjc(LS) v(LS) R thjc(HS) P v(HS) R thjc j(LS) R thja 21 High Current PN Half Bridge BTS 7930B Thermal Characteristics Limits Unit Test Condition min max – 4.8 K/W – 1.6 K/W – 2.4 K/W 2 – 50 K/W 6cm cooling area ...
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... Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the BTS 7930B is used bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well ...
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... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 9.9 A 7.5 6.6 17 +0.1 -0.03 0. 10.8 0.47 0.8 8.42 HLGF1019 23 High Current PN Half Bridge BTS 7930B Package Outlines P-TO-263-7 4.4 +0.1 1.3 -0.02 B 0.05 1) 0.1 2.4 0.1 B Dimensions in mm Rev. 2.0, 2006-06-01 ...
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... Layout changes (new Infineon logo, ordering code • Operating range extended (page 7) • Switching times adjusted (page 11/12) • Rth values corrected (page 21) • Application drawing updated Rev. 2.0 2006-06-01 Data Sheet • Figure 7 (page 14) updated Data Sheet removed) 24 High Current PN Half Bridge BTS 7930B Revision History 2006-06-01 ...
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... Data Sheet High Current PN Half Bridge 25 BTS 7930B Revision History Rev. 2.0, 2006-06-01 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Data Sheet High Current PN Half Bridge 26 BTS 7930B 2006-06-01 ...
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... Published by Infineon Technologies AG ...