BTN 7970P Infineon Technologies, BTN 7970P Datasheet
BTN 7970P
Specifications of BTN 7970P
Related parts for BTN 7970P
BTN 7970P Summary of contents
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Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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High Current PN Half Bridge NovalithIC™ 1 Overview Features Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ °C) • High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ °C) Low ...
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Block Diagram The BTN7970 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current half-bridge. All three ...
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Pin Configuration 3.1 Pin Assignment Figure 3 Pin Assignment BTN7970B, BTN7970P and BTN7970S (top view) 3.2 Pin Definitions and Functions Pin Symbol 1 GND INH 4,8 OUT 5 ...
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General Product Characteristics 4.1 Absolute Maximum Ratings 1) Absolute Maximum Ratings = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin T j (unless otherwise specified) Pos. Parameter Voltages 4.1.1 Supply Voltage ...
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Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions ...
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Functional Range Pos. Parameter 4.2.1 Supply Voltage Range for Nominal Operation 4.2.2 Extended Supply Voltage Range for Operation 4.2.3 Junction Temperature Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical ...
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Block Description and Characteristics 5.1 Supply Characteristics -40 °C to +150 ° (unless otherwise specified) Pos. Parameter General 5.1.1 Supply Current 5.1.2 Quiescent Current Figure 5 Typical Quiescent ...
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Power Stages The power stages of the BTN7970 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in ...
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Power Stages - Static Characteristics = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter High Side ...
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Switching Times dr( OUT 90% 10% Figure 7 Definition of switching times high side ( ( ( OUT 90% 10% Figure 8 Definition of ...
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Power Stages - Dynamic Characteristics = -40 °C to +150 ° 13 (unless otherwise specified) Pos. Parameter High Side Switch Dynamic Characteristics 5.2.7 Rise-Time 5.2.8 Slew Rate HS on 5.2.9 ...
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-40 °C to +150 ° (unless otherwise specified) Pos. Parameter Low Side Switch Dynamic Characteristics 5.2.13 Rise-Time of LS 5.2.14 Slew Rate LS switch off 5.2.15 Switch off Delay Time LS 5.2.16 ...
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Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used ...
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CLx I CLx 0 Figure 9 Timing Diagram Current Limitation (Inductive Load) High Side Switch CLH0 500 1000 Figure 10 Typical Current ...
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High Side Switch Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this results in a switched ...
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Electrical Characteristics - Protection Functions = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Under Voltage ...
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Control and Diagnostics 5.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In ...
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I [mA IS(lim) Figure 13 Sense Current vs. Load Current 5.4.5 Truth Table Device State Normal Operation Over-Voltage (OV) Under-Voltage (UV) Overtemperature or Short Circuit of HSS or LSS Current Limitation Mode 1) Will return to normal operation ...
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Electrical Characteristics - Control and Diagnostics = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Control ...
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Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 ...
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Half-bridge Configuration Considerations Please note that, if the BTN7970 is used in a half-bridge configuration with the load connected between OUT and GND and the supply voltage is exceeding the Overvoltage Switch-OFF level “Overvoltage Lock Out” feature leads to ...
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Package Outlines 7.1 PG-TO263-7-1 0...0 0.6 ±0.1 1) Typical Metal surface min 7.25 6.9 All metal surfaces tin plated, except area of cut. Footprint Figure 16 PG-TO263-7-1 ( Plastic Green Transistor Single Outline ...
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PG-TO220-7-11 0...0.3 0...0.15 1) Typical Metal surface min 7.25 12.3 All metal surfaces tin plated, except area of cut. Figure 17 PG-TO220-7-11 ( Plastic Green Transistor Single Outline Package Green Product (RoHS compliant) To meet ...
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PG-TO220-7-12 0...0.15 1) Typical Metal surface min 7.25 12.3 All metal surfaces tin plated, except area of cut. Figure 18 PG-TO220-7-12 ( Plastic Transistor Single Outline Package Green Product (RoHS compliant) To meet the world-wide ...
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Revision History Revision Date Changes 1.1 2007-11-21 New packages added; 1.0 2007-11-06 Initial version Data Sheet Data Sheet High Current PN Half Bridge 27 BTN7970 Revision History Rev. 1.1, 2007-11-21 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...