BTS 149 Infineon Technologies, BTS 149 Datasheet

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BTS 149

Manufacturer Part Number
BTS 149
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 149

Packages
P-TO220-3
Channels
1.0
Vds (max)
60.0 V
Id(nom)
6.4 A
Rds (on) (max)
20.0 mOhm
Id(lim) (min)
30.0 A
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip tech-
nology. Fully protected by embedded protected functions.
Current limitation
linear applications
1
IN
E S D
pro te ctio n
O v erloa d
lim ita tio n
dv /d t
te m pe rature
p ro te ctio n
lim ita tio n
C u rre n t
O ve r-
O ve rvoltag e
S h ort circ uit
p rotection
S ho rt c ircu it
Page 1
p rotection
p ro te ctio n
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
H IT F E T
S o u rce
D rain
L O A D
3
2
V bb
+
HITFET
V
R
I
I
E
D(lim)
D(ISO)
DS
AS
DS(on)
    = = = =
BTS 149
19.05.2000
6000 mJ
60
18
30
19
M
V
mΩ
A
A

Related parts for BTS 149

BTS 149 Summary of contents

Page 1

... ircu ort circ uit rature p rotection ctio ctio rce Page 1 HITFET     BTS 149 DS(on D(lim D(ISO) 6000 mJ ...

Page 2

... DS(SC stg P tot (Human Body Model) ESD thJC R thJA 3) R thJA Page 2 BTS 149 Value Unit limit | ≤ ... +150 ° ... +150 178 W 6000 mJ 3000 V 110 92 E 40/150/56 0.7 K 19.05.2000 ...

Page 3

... Auto restart behaviour can occur. Symbol V DS(AZ) I DSS = IN(th) < IN(1) D D(lim D(lim) IN( IN( IN(H) R DS(on) R DS(on) I D(ISO °C C Page 3 BTS 149 Values Unit min. typ. max µA 1.3 1.7 2 100 µA - 400 1000 1500 3000 6000 500 - - 300 - - mΩ ...

Page 4

... Page 4 Values min. typ. - 130 / /dt DS off 150 165 jt AS 6000 - 1800 - - 1.1 SD BTS 149 Unit max 100 µs 170 3 V/µ ° 19.05.2000 ...

Page 5

... Measurementpoint for I D(lim Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Page 5 BTS 149 HITFET I D(SCp) I D(Lim ...

Page 6

... Typ. input threshold voltage V IN(th) typ. 75 100 °C 150 T j Page =19A; V =10V max. 15 typ - =3,9mA; V =12V 2.0 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 - BTS 149 100 °C 150 T j 100 °C 150 T j 19.05.2000 ...

Page 7

... Typ. output characteristic I = f(V D Parameter ° Page =25° BTS 149 10V Vin=3V Vin= 19.05.2000 ...

Page 8

... Application examples: Status signal of thermal shutdown by monitoring input current HITFET µC µ ∆ IN( ∆ V thermal shutdown Page 8 BTS 149 19.05.2000 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Package P-TO220-3-1 4.4 1.3 0.2 2.4 1) 0.5 GPT05164 Page 9 BTS 149 Ordering Code Q67060-S6503-A2 19.05.2000 ...

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