BTS 3142D Infineon Technologies, BTS 3142D Datasheet

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BTS 3142D

Manufacturer Part Number
BTS 3142D
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3142D

Packages
PG-TO252-3
Channels
1.0
Vds (max)
42.0 V
Id(nom)
4.6 A
Rds (on) (max)
28.0 mOhm
Id(lim) (min)
24.0 A
Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching
• µC compatible power switch for 12 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded
protection functions.
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
Smart Low Side Power Switch
Source
Drain
Power HITFET BTS 3142D
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
P / PG-TO252-3-11
DS
AS
DS(on)
Rev. 1.3, 2006-12-22
4.6
3.5
42
28
M
V
mΩ
A
J

Related parts for BTS 3142D

BTS 3142D Summary of contents

Page 1

... Protection Datasheet Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy Current Overvoltage- Limitation Protection Over- Short circuit temperature Protection Protection 1 Smart Low Side Power Switch Power HITFET BTS 3142D DS(on) I 4.6 D(Nom PG-TO252-3- Drain ...

Page 2

... stg P tot Ω (Human Body Model) ESD R thJC R thJA 2 Smart Low Side Power Switch Power HITFET BTS 3142D Value Unit limit | ≤ °C -40 ...+150 -55 ... +150 W 59 1.1 J 3.5 67 1.1 K/W 115 55 Rev. 1.3, 2006-12-22 ...

Page 3

... Datasheet Symbol V DS(AZ) I DSS V IN(th) I IN(on) R DS(on) R DS(on) I D(Nom °C, SMD I D(ISO °C, T < 150° D(lim) = 200 µs 3 Smart Low Side Power Switch Power HITFET BTS 3142D Values Unit min. typ. max 1.5 20 µA V 1.3 1.7 2.2 0 µA mΩ ...

Page 4

... D off = - IN(Prot) I IN(Prot Smart Low Side Power Switch Power HITFET BTS 3142D Values min. typ. max 120 - 60 120 - 0.3 1.5 / 0.3 1.5 /dt DS off 150 175 - 220 400 - 180 400 3 ...

Page 5

... V IN Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour V IN Gate Drive I IN Source/ I Ground Smart Low Side Power Switch Power HITFET BTS 3142D HITFET Rev. 1.3, 2006-12-22 ...

Page 6

... ON mΩ Rthjc = 1.1 K/W °C 75 100 150 Typ. input threshold voltage =5V V IN(th) max. typ. 100 125 °C 175 Smart Low Side Power Switch Power HITFET BTS 3142D = f =12.6A; V =10V 100 125 °C - 1.2 mA ...

Page 7

... Typ. off-state drain current I DSS µA 10V 12.5 Vin= Smart Low Side Power Switch Power HITFET BTS 3142D = f =12V 100 125 °C -50 - ...

Page 8

... Datasheet 10 Typ. transient thermal impedance Z =f(t thJA Parameter: D -40°C 25°C 85°C 150°C ms 0.4 0 Smart Low Side Power Switch Power HITFET BTS 3142D cooling area D=0.5 1 0.2 0.1 0.05 0 0.02 0.01 -1 Single pulse - ...

Page 9

... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 6.5 -0.05 A 5.4 ±0.1 (5) 3x 0.75 ±0.1 2.28 0. Smart Low Side Power Switch Power HITFET BTS 3142D Package Outlines +0.05 2.3 -0.10 +0.08 B 0.5 -0.04 +0.20 0.9 -0.01 0...0.15 +0.08 0.5 -0.04 0.1 B All metal surfaces tin plated, except area of cut. ...

Page 10

... Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet Smart Low Side Power Switch Power HITFET BTS 3142D 10 Revision History Rev. 1.3, 2006-12-22 ...

Page 11

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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