BTS 112-A SMD Infineon Technologies, BTS 112-A SMD Datasheet - Page 2

• Manufacturer Part Number: BTS 112-A SMD
• Manufacturer: Infineon Technologies

Specifications of BTS 112-A SMD

• Packages: P-TO220-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 2.5 A
• Rds (on) (max): 150.0 mOhm
• Id(lim) (min): -

Electrical Characteristics
at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Dynamic Characteristics
Forward transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on time
V
Turn-off time
V
GS
GS
GS
GS
GS
DS
GS
GS
GS
CC
CC
T
j
= 0
=
= 60 V,
=
= 10 V
= 0
= 0
= 0
= 30 V,
= 30 V,
= 25 ˚C, unless otherwise specified.
2
V
, I
, V
, V
, V
DS
20 V,
D
, I
I
DS
DS
DS
D
, I
= 0.25 mA
D
V
V
V
= 25 V,
= 25 V,
= 25 V,
D
= 1.0 mA
DS
t
GS
t
GS
V
R
on
off
= 7.5 A
DS
DS(on)max
, (
, (
= 0
= 10 V,
= 10 V,
t
t
= 0
on
off
f
f
f
=
=
= 1 MHz
= 1 MHz
= 1 MHz
,
t
t
d(on)
d(off)
I
I
I
T
T
T
T
D
D
D
j
j
j
j
= 7.5 A
= 25 C
= 150 C
= 25 C
= 150 C
= 3 A,
= 3 A,
+
+
t
t
r
f
)
)
R
R
GS
GS
= 50
= 50
Symbol
V
V
R
g
C
C
C
t
t
t
I
I
t
d(on)
d(off)
f
fs
r
DSS
GSS
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
2
min.
60
2.5
–
–
–
–
–
3.0
–
–
–
–
–
–
–
TEMPFET
typ.
–
3.0
0.1
10
10
2
0.12
5.7
360
160
50
15
30
40
55
Values
max.
–
3.5
1.0
100
100
4
0.15
–
480
250
90
25
45
55
75
®
BTS 112 A
Unit
V
nA
S
pF
ns
A
A
19.02.04