2SK2611

Manufacturer Part Number2SK2611
ManufacturerTOSHIBA Semiconductor CORPORATION
2SK2611 datasheet
 
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
DC−DC Converter, Relay Drive and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement−mode
: V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
= 90 V, T
= 25°C (initial), L = 15 mH, R
DD
ch
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
2SK2611
: R
= 1.1 Ω (typ.)
DS (ON)
: |Y
|
7.0 S (typ.)
fs
=
= 100 μA (max) (V
= 720 V)
DS
= 2.0~4.0 V (V
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
900
V
DSS
V
900
V
DGR
V
±30
V
GSS
I
9
A
D
I
27
A
DP
P
150
W
D
E
663
mJ
AS
I
9
A
AR
E
15
mJ
AR
T
150
°C
ch
T
−55~150
°C
stg
Symbol
Max
Unit
R
0.833
°C / W
th (ch−c)
R
50
°C / W
th (ch−a)
= 25 Ω, I
G
AR
1
2SK2611
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
= 9 A
2006-11-10
Unit: mm

2SK2611 Summary of contents