AM29LV004BT-70ED Meet Spansion Inc., AM29LV004BT-70ED Datasheet
AM29LV004BT-70ED
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AM29LV004BT-70ED Summary of contents
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Am29LV004B Data Sheet The Am29LV004B is not offered for new designs. Please contact a Spansion representative for alter- nates. The following document contains information on Spansion memory products. Although the document is marked with the name of the company that ...
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DATA SHEET Am29LV004B 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory The Am29LV004B is not offered for new designs. Please contact a Spansion representative for alternates. DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.7 ...
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GENERAL DESCRIPTION The Am29LV004B Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt ...
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... Program and Erase Operation Status .................................... 10 Standby Mode ........................................................................ 10 Automatic Sleep Mode ........................................................... 10 RESET#: Hardware Reset Pin ............................................... 10 Output Disable Mode .............................................................. 10 Table 2. Am29LV004BT Top Boot Block Sector Address Table..... 11 Table 3. Am29LV004BB Bottom Boot Block Sector Address Table 11 Autoselect Mode ..................................................................... 12 Table 4. Am29LV004B Autoselect Codes (High Voltage Method).. 12 Sector Protection/Unprotection ............................................... 12 Temporary Sector Unprotect ...
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PRODUCT SELECTOR GUIDE Family Part Number Speed Options Max access time ACC Max CE# access time Max OE# access time Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM ...
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CONNECTION DIAGRAMS A16 1 A15 2 A14 3 A13 4 A12 5 A11 WE# 9 RESET RY/BY# 12 A18 ...
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... DEVICE NUMBER/DESCRIPTION Am29LV004B 4 Megabit (512 K x 8-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program and Erase Valid Combinations AM29LV004BT-70, EC, EI, ED, EF AM29LV004BB-70 AM29LV004BT-90, AM29LV004BB-90 EC, EI, EE, ED, EF, EK AM29LV004BT-120, AM29LV004BB-120 TEMPERATURE RANGE C = Commercial (0°C to +70°C) ° ° Industrial (– ...
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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is composed of ...
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DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autose ...
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... Table 2. Am29LV004BT Top Boot Block Sector Address Table Sector A18 A17 A16 SA0 0 0 SA1 0 0 SA2 0 1 SA3 0 1 SA4 1 0 SA5 1 0 SA6 1 1 SA7 1 1 SA8 1 1 SA9 1 1 SA10 1 1 Table 3. Am29LV004BB Bottom Boot Block Sector Address Table ...
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... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Table 4. Am29LV004B Autoselect Codes (High Voltage Method) Description Manufacturer ID: AMD Device ID: Am29LV004BT (Top Boot Block) Device ID: Am29LV004BB (Bottom Boot Block) Sector Protection Verification L = Logic Low = Logic High = V ...
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START PLSCNT = 1 RESET Wait 1 μs No First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...
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START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 2. Temporary Sector Unprotect ...
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Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don’t care for this command. The reset command may be written between the sequence cycles in an erase command sequence before ...
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Characteristics” for parameters, and to Figure 15 for timing diagrams. Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Completed Note: See Table 5 for program command sequence. ...
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The Sector Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. When the Embedded Erase algorithm is complete, the device returns to reading ...
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Command Definitions Table 5. Am29LV004B Command Definitions Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Manufacturer ID Device ID, Top Boot Block Auto- select Device ID, Bottom Boot Block 4 (Note 7) Sector Protect Verify (Note 8) Program ...
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WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsec- tions describe the functions of these bits. DQ7, RY/BY#, and DQ6 ...
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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...
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The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as ...
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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the ...
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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...
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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current CC I CC2 (Notes ...
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DC CHARACTERISTICS (continued) Zero Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...
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TEST CONDITIONS Device Under Test C L 6.2 kΩ Note: Diodes are IN3064 or equivalent Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 12. Input Waveforms ...
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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...
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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...
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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Hold Time WLAX Data Setup Time DVWH Write Pulse Width WLWH Address ...
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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE Data RY/BY VCS Note program address program data ...
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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data 55h RY/BY# t VCS V CC Note sector address (for Sector Erase Valid Address ...
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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...
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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Temporary Sector ...
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AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect ...
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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Hold Time ELAX Data Setup Time DVEH CE# Pulse Width ELEH CP ...
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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data, DQ7# = complement of the data written ...
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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions: 25 programming typicals assume checkerboard pattern. 2. Under worst case ...
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PHYSICAL DIMENSIONS* TS 040—40-Pin Standard TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering Am29LV004B Dwg rev AA; 10/99 21522D5 October 11, 2006 ...
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REVISION SUMMARY Revision A (January 1998) Initial release. Revision B (June 1998) Expanded data sheet from Advanced Information to Preliminary version. Distinctive Characteristics Changed “Manufactured on 0.35 µm process technology” to “Manufactured on 0.32 µm process technology”. General Description Second ...