M29W160EB-70N6 STMicroelectronics, M29W160EB-70N6 Datasheet
M29W160EB-70N6
Manufacturer Part Number
M29W160EB-70N6
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W160ET70N6.pdf
(40 pages)
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FEATURES SUMMARY
January 2004
SUPPLY VOLTAGE
–
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
–
35 MEMORY BLOCKS
–
–
PROGRAM/ERASE CONTROLLER
–
ERASE SUSPEND and RESUME MODES
–
UNLOCK BYPASS PROGRAM COMMAND
–
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
–
LOW POWER CONSUMPTION
–
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
–
–
–
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
CC
= 2.7V to 3.6V for Program, Erase
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
6 x 8mm
M29W160EB
M29W160ET
FBGA
1/40
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