M29W160EB STMicroelectronics, M29W160EB Datasheet

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M29W160EB

Manufacturer Part Number
M29W160EB
Description
Manufacturer
STMicroelectronics
Datasheet

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FEATURES SUMMARY
January 2004
SUPPLY VOLTAGE
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
35 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
CC
= 2.7V to 3.6V for Program, Erase
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
6 x 8mm
M29W160EB
M29W160ET
FBGA
1/40

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M29W160EB Summary of contents

Page 1

... PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160ET: 22C4h – Bottom Device Code M29W160EB: 2249h January 2004 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages M29W160ET M29W160EB TSOP48 ( 20mm ...

Page 2

... M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. TFBGA Connections (Top view through package Figure 5. Block Addresses (x8 Figure 6. Block Addresses (x16 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A19 Data Inputs/Outputs (DQ0-DQ7 Data Inputs/Outputs (DQ8-DQ14) ...

Page 3

... Table 16. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data . 26 Figure 16.TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline . . . . . . . . . . . . . . . 27 Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 18. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 M29W160ET, M29W160EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... M29W160ET, M29W160EB APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 19. Top Boot Block Addresses, M29W160ET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 20. Bottom Boot Block Addresses, M29W160EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 21. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 22. CFI Query Identification String Table 23. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 24. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 25 ...

Page 5

... DQ0-DQ14 E DQ15A– BYTE AI06849B NC M29W160ET, M29W160EB Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Byte/Word Organization Select Supply Voltage Ground Not Connected Internally 5/40 ...

Page 6

... M29W160ET, M29W160EB Figure 3. TSOP Connections 6/40 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W160ET M29W160EB A18 A17 AI06850 A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 V CC DQ11 ...

Page 7

... A17 A18 NC A10 A5 NC A19 A11 DQ2 DQ7 DQ0 DQ5 DQ8 DQ10 DQ12 DQ14 DQ9 DQ11 V CC DQ13 DQ1 DQ3 DQ4 DQ6 M29W160ET, M29W160EB 6 A13 A12 A14 A15 A16 BYTE DQ15 A– AI02985B 7/40 ...

Page 8

... M29W160ET, M29W160EB Figure 5. Block Addresses (x8) M29W160ET Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte 000000h Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses. ...

Page 9

... Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses. M29W160EB Bottom Boot Block Addresses (x16) FFFFFh 32 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 16 KWord 04000h 03FFFh Total KWord Blocks 03000h 02FFFh 02000h 01FFFh 00000h M29W160ET, M29W160EB Total KWord Blocks 4 KWord 4 KWord 8 KWord AI06852 9/40 ...

Page 10

... M29W160ET, M29W160EB SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- ...

Page 11

... Others M29W160ET, M29W160EB , Chip Enable should CC2 ± 0.2V. For the Standby current CC , for Program or Erase operations un- CC3 Data Inputs/Outputs DQ14-DQ8 DQ7-DQ0 Hi-Z Data Output Hi-Z Data Input Hi C4h (M29W160ET) ID Hi-Z 49h (M29W160EB) ± 0.2V The CC2 Hi-Z Hi-Z 20h 11/40 ...

Page 12

... The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W160ET is 22C4h and for the M29W160EB is 2249h. The Block Protection Status of each block can be read using a Bus Read operation with the block ...

Page 13

... Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a M29W160ET, M29W160EB 13/40 ...

Page 14

... M29W160ET, M29W160EB Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended ...

Page 15

... AA 2AA 55 555 A0 AA 2AA 55 555 2AA 55 555 80 AA 2AA 55 555 DQ15 when BYTE M29W160ET, M29W160EB 4th 5th Addr Data Addr Data Addr PA PD 555 AA 2AA 55 555 555 AA 2AA 55 BA 6th Data 10 30 15/40 ...

Page 16

... M29W160ET, M29W160EB Table 5. Commands, 8-bit mode, BYTE = V Command Addr Data 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 AAA Block Erase 6+ AAA Erase Suspend 1 X Erase Resume 1 X Read CFI Query ...

Page 17

... Program/Erase Controller has suspended the Erase operation. Figure 7, Data Polling Flowchart, gives an exam- ple of how to use the Data Polling Bit. A Valid Ad- dress is the address being programmed or an address within the block being erased. M29W160ET, M29W160EB (1,2) Min Typ 29 0.8 ...

Page 18

... M29W160ET, M29W160EB Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting will set DQ5 to ‘1’. A Bus Read operation to that ad- dress will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’ ...

Page 19

... Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions. CC M29W160ET, M29W160EB START READ DQ6 READ DQ5 & DQ6 DQ6 NO = TOGGLE ...

Page 20

... M29W160ET, M29W160EB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Table 9. Operating and AC Measurement Conditions Parameter ...

Page 21

... OUT 6MHz ±0.2V ±0.2V CC Program/Erase Controller active –0.5 0. 1.8mA OL µ V –0 –100 11 1.8 M29W160ET, M29W160EB Typ Max Unit µ ±1 A µ ± µ 35 100 12.5 V µ 100 A 2.3 ...

Page 22

... M29W160ET, M29W160EB Figure 11. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) t Chip Enable Low to Output Transition t LZ ELQX t t Chip Enable Low to Output Valid ...

Page 23

... Program/Erase Valid to RB Low t BUSY WHRL High to Chip Enable Low VCHEL VCS CC Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH Parameter M29W160ET, M29W160EB tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL M29W160E 70 Min 70 Min 0 Min 45 Min 45 Min 0 ...

Page 24

... M29W160ET, M29W160EB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...

Page 25

... RP ( Low to Read Mode t READY PLYH ( Rise Time VIDR PHPHH Note: 1. Sampled only, not 100% tested. tPHWL, tPHEL, tPHGL tPLYH Parameter ID M29W160ET, M29W160EB tRHWL, tRHEL, tRHGL tPHPHH AI02931B M29W160E 70 90 Min 50 50 Min 0 0 Min 500 500 Max 10 ...

Page 26

... M29W160ET, M29W160EB PACKAGE MECHANICAL Figure 15. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 B 0 ...

Page 27

... M29W160ET, M29W160EB ddd A2 BGA-Z32 inches Typ Min 0.0102 0.0138 0.2362 0.2323 0.1575 – 0.3150 0.3110 0.2205 – 0.0315 – 0.0394 – ...

Page 28

... M29W160ET, M29W160EB PART NUMBERING Table 18. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 160E = 16 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed Package N = TSOP48 TFBGA48: 6x8 mm, 0.80mm pitch Temperature Range 6 = – ...

Page 29

... M29W160ET, M29W160EB Address Range Address Range (x8) 64 1F0000h-1FFFFFh F8000h-FFFFFh 64 1E0000h-1EFFFFh F0000h-F7FFFh 64 1D0000h-1DFFFFh E8000h-EFFFFh 64 1C0000h-1CFFFFh E0000h-E7FFFh 64 1B0000h-1BFFFFh D8000h-DFFFFh 64 1A0000h-1AFFFFh D0000h-D7FFFh 64 190000h-19FFFFh C8000h-CFFFFh 64 180000h-18FFFFh C0000h-C7FFFh 64 170000h-17FFFFh B8000h-BFFFFh 64 ...

Page 30

... M29W160ET, M29W160EB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

Page 31

... Typical timeout for minimum size write buffer program = 2 Typical timeout per individual block erase = 2 Typical timeout for full chip erase = 2 Maximum timeout for Byte/Word program = 2 Maximum timeout for write buffer program = 2 Maximum timeout per individual block erase = 2 Maximum timeout for chip erase = 2 M29W160ET, M29W160EB n µs n µ ...

Page 32

... M29W160ET, M29W160EB Table 24. Device Geometry Definition Address Data x16 x8 27h 4Eh 0015h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h 0000h 31h 62h ...

Page 33

... Simultaneous Operations not supported Burst Mode not supported supported Page Mode not supported page Word page Word Data XXXX XXXX 64 bit: unique device number XXXX XXXX M29W160ET, M29W160EB Description Value "P" "R" "I" "1" "0" Yes ...

Page 34

... M29W160ET, M29W160EB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the Flash memory. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to ...

Page 35

... Wait 4µs ( Wait 100µ A0 ( Wait 4µ Wait 60ns Read DATA DATA NO = 01h YES PASS M29W160ET, M29W160EB ++ YES AI03469b FAIL . IL 35/40 ...

Page 36

... M29W160ET, M29W160EB Figure 18. Programmer Equipment Chip Unprotect Flowchart NO = 1000 36/40 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = Wait 4µ Wait 10ms ADDRESS = CURRENT BLOCK ADDRESS A1 Wait 4µ ...

Page 37

... Wait 100µs WRITE 40h ADDRESS = BLOCK ADDRESS Wait 4µs READ DATA ADDRESS = BLOCK ADDRESS DATA NO = 01h YES ISSUE READ/RESET COMMAND PASS ISSUE READ/RESET M29W160ET, M29W160EB ++ YES COMMAND FAIL AI03471 37/40 ...

Page 38

... M29W160ET, M29W160EB Figure 20. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL 38/40 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS WITH WRITE 60h ANY ADDRESS WITH ...

Page 39

... Package information corrected in ordering information table. Document promoted to full Datasheet status. Block Protect and Chip Unprotect 21-Mar-2003 2.0 algorithms specified in Appendix C, BLOCK PROTECTION. 27-Jun-2003 2.1 TSOP48 package information updated (see Figure 15 and Table 16). 26-Jan-2004 3.0 Block Erase Command clarified. M29W160ET, M29W160EB Revision Details 39/40 ...

Page 40

... M29W160ET, M29W160EB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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