E53NA50

Manufacturer Part NumberE53NA50
DescriptionSearch ---> STE53NA50
ManufacturerSTMicroelectronics
E53NA50 datasheet
 
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N - CHANNEL ENHANCEMENT MODE
TYPE
V
R
DSS
DS(on)
ST E53NA50
500 V
< 0.085
TYPICAL R
= 0.075
DS(on)
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERY LOW INTERNAL PARASITIC
INDUCTANCE
ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
SMPS & UPS
MOTOR CONTROL
WELDING EQUIPMENT
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Drain-source Voltage (V
DS
GS
V
Drain- gate Voltage (R
DGR
GS
V
Gate-source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
Total Dissipation at T
= 25
to t
c
Derating Factor
T
Storage Temperature
st g
T
Max. Operating Junction T emperature
j
V
Insulation W ithhstand Voltage (AC-RMS)
ISO
( ) Pulse width limited by safe operating area
February 1998
FAST POWER MOS TRANSISTOR
I
D
53 A
INTERNAL SCHEMATIC DIAGRAM
= 0)
= 20 k )
o
= 25
C
c
o
= 100
C
c
o
C
STE53NA50
ISOTOP
Value
Unit
500
V
500
V
30
V
53
A
33
A
212
A
460
W
o
3.68
W/
C
o
-55 to 150
C
o
150
C
2500
V
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E53NA50 Summary of contents