MDS50-800

Manufacturer Part NumberMDS50-800
DescriptionDIODE / SCR MODULE
ManufacturerSTMicroelectronics
MDS50-800 datasheet
 


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MAIN FEATURES:
Symbol
Value
I
50-70-85
T(RMS)
V
/V
800 and 1200
DRM
RRM
I
50 and 100
GT
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits,
welding
equipment,
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
ABSOLUTE RATINGS (limiting values)
Symbol
I
RMS on-state current
T(RMS)
Average on-state current
I
T(AV)
(Single phase-circuit, 180° conduction angle per device)
I
Non repetitive surge peak on-state
TSM
I
current (Tj initial = 25°C)
FSM
²
²
I
t
I
t Value for fusing
Critical rate of rise of on-state current
dI/dt
I
= 2 x I
, tr
G
GT
I
Peak gate current
GM
P
Average gate power dissipation
G(AV)
T
Storage junction temperature range
stg
T
Operating junction temperature range
j
V
Maximum peak reverse SCR gate voltage
RGM
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
MDS35 / 50 / 80 Series
Unit
A
V
mA
motor
speed
Parameter
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
100 ns
tp = 20 µs
DIODE / SCR MODULE
ISOTOP®
Value
35
50
80
50
70
85
Tc = 85°C
25
35
55
420
630
730
Tj = 25°C
400
600
700
Tj = 25°C
800 1800 2450
Tj = 125°C
50
Tj = 125°C
4
Tj = 125°C
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
2
A
S
A/µs
A
W
°C
V
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MDS50-800 Summary of contents