GB330 GTM Corporation, GB330 Datasheet
GB330
Manufacturer Part Number
GB330
Description
Low Voltage, High Frequency Inverter,
Manufacturer
GTM Corporation
Datasheet
1.GB330.pdf
(3 pages)
G
Description
T
Package Dimensions
Absolute Maximum Ratings
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to Case
Typical Junction Capacitance
Max. Reverse Leakage Current
*See Fig. 2
Max. Forward Voltage Drop
*See Fig. 1
Max. Peak One Cycle Non-Repetitive
Surge Current
*See Fig. 7
Max. Average Forward Current
* See Fig. 5
Max. DC Reverse Voltage
Max. Working Peak Reverse Voltage
(1) Pulse Width < 300us, Duty Cycle < 2%
G
Parameter
he GB330 is designed for Low Voltage, High Frequency Inverter, Free Wheeling, and Polarity Protection Application.
B
B
3
3
3
3
0
0
(1)
(1)
5us Sine or 3us Rect. pulse
10ms Sine or 6ms Rect. pulse
Tj = 25 :
Tj =125 :
@ 3.0A
@ 6.0A
@ 3.0A
@ 6.0A
50% duty cycle@Tc=134 : ,
Rectangular waveform
VR=rated V
Tj = 25 :
Tj = 125 :
Following any rated
load condition and
with rated V
applied
RRM
R
EF.
C
D
A
B
E
F
Symbol
V
V
I
Min.
6.40
5.20
6.80
7.20
0.60
R
R(RMS)
Tstg
V
I
FSM
R
Tj
C
RM
I
FM
Millimeter
2.30 REF.
F
w
JC
j
M
Max.
6.80
5.50
7.20
7.80
0.90
-40~+125
-40~+125
Ratings
0.45
0.52
0.35
0.46
REF.
290
535
4.7
3.5
50
90
30
2
G
H
M
K
L
J
Min.
0.50
2.20
0.45
0.45
0.90
5.40
Millimeter
1/3
Unit
mA
mA
pF
Max.
0.70
2.40
0.60
0.60
1.50
5.80
V
V
A
A
V
V
/W
Related parts for GB330
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Low Voltage, High Frequency Inverter, Free Wheeling, and Polarity Protection
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
DUAL OPERATIONAL AMPLIFIER AND VOLTAGE REFERENCE
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Manufacturer:
GTM CORPORATION
Datasheet:
Part Number:
Description:
Zener Diodes
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
Zener Diodes
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
2-WIRE SERIAL EEPROM
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
2-WIRE SERIAL EEPROM
Manufacturer:
GTM Corporation
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
Part Number:
Description:
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
Part Number:
Description:
PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
Part Number:
Description:
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
Part Number:
Description:
2-WIRE SERIAL EEPROMS
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
Part Number:
Description:
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 70V TO 150V, CURRENT 20A
Manufacturer:
GTM [GTM CORPORATION]
Datasheet:
GB330 Summary of contents
Page 1
... Description T he GB330 is designed for Low Voltage, High Frequency Inverter, Free Wheeling, and Polarity Protection Application. Package Dimensions Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Typical Junction Capacitance Max. Reverse Leakage Current *See Fig ...
Page 2
Characteristics Curve 2/3 ...
Page 3
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to ...