GS152B GTM Corporation, GS152B Datasheet

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GS152B

Manufacturer Part Number
GS152B
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
GTM Corporation
Datasheet
G
P
Description
The GS152B provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Low On-State Resistance:0.3 Ł (max)
*Ultra High Speed Switching
Applications
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery System
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
GS152B
P
G
-
-
C
C
S
S
H
H
1
A
1
A
N
N
5
5
N
N
2
2
E
E
L
L
Parameter
Parameter
B
B
E
E
N
N
1,2
H
H
A
A
3
N
N
C
C
E
E
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
O
O
D
D
D
@T
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
GS
DS
A
=25 :
P
P
=25 :
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
O
REF.
O
HE
Ratings
A1
A2
D
A
E
0.0028
Value
S
S
0.35
±12
-0.7
-2.8
360
-20
F
F
E
E
0.80
0.80
1.80
1.15
1.80
Min.
T
T
0
Millimeter
Pb Free Plating Product
Max.
1.10
0.10
1.00
2.20
1.35
2.40
BV
R
I
D
DS(ON)
ISSUED DATE :2006/02/06
REVISED DATE :
REF.
Q1
DSS
L1
L
b
e
c
W/ :
Unit
Unit
: /W
W
0.15
0.25
0.10
Min.
V
V
A
A
:
0.15 BSC.
Millimeter
0.42 REF.
0.65 REF.
Page: 1/4
300m
-0.7A
-20V
Max.
0.35
0.40
0.25

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GS152B Summary of contents

Page 1

... Description The GS152B provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Low On-State Resistance:0.3 Ł (max) ...

Page 2

... Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle Surface mounted on FR4 board, t GS152B Symbol Min. Typ. - DSS - -0 ...

Page 3

... Characteristics Curve Fig 1. Drain Current v.s. Drain-Source Voltage Fig 3. Drain-Source On-State Resistance v.s. Gate-Source Voltage Fig 5. Drain-Source On-State Resistance v.s. Ambient Temperature GS152B ISSUED DATE :2006/02/06 REVISED DATE : Fig 2. Drain Current v.s. Gate-Source Voltage Fig 4. Drain-Source On-State Resistance v.s. Drain Current Fig 6. Gate-Source Cut-off Voltage Variance v ...

Page 4

... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS152B ISSUED DATE :2006/02/06 REVISED DATE : Fig 8. Gate-Source Voltage v.s. Gate Charge ...

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