GS138K GTM Corporation, GS138K Datasheet

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GS138K

Manufacturer Part Number
GS138K
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
GTM Corporation
Datasheet
1.GS138K.pdf (4 pages)
G
N
Description
The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GS138K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
GS138K
N
G
-
-
C
C
S
S
H
H
1
1
A
A
N
N
3
3
N
N
8
8
E
E
L
L
Parameter
Parameter
K
K
E
E
N
N
1,2
H
H
A
A
3
3
, V
, V
N
N
C
C
GS
GS
E
@10V
@10V
E
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
I
O
O
D
D
D
@T
@T
D
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
P
=25 :
P
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
REF.
O
O
HE
Ratings
Ratings
A1
A2
D
A
E
0.003
S
S
0.35
±20
640
500
950
360
50
F
F
E
E
0.80
0.80
1.80
1.15
1.80
Min.
T
T
0
Millimeter
Pb Free Plating Product
Max.
1.10
0.10
1.00
2.20
1.35
2.40
BV
R
I
D
DS(ON)
ISSUED DATE :2005/10/11
REVISED DATE :
REF.
Q1
DSS
L1
L
b
e
c
W/ :
Unit
Unit
: /W
mA
mA
mA
W
0.15
0.25
0.10
Min.
V
V
:
0.15 BSC.
Millimeter
0.42 REF.
0.65 REF.
Page: 1/4
640mA
Max.
0.35
0.40
0.25
50V
2

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GS138K Summary of contents

Page 1

... Description The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS138K is universally used for all commercial-industrial applications. Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions Absolute Maximum Ratings ...

Page 2

... Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle Surface mounted on FR4 board, t 10sec. GS138K Unless otherwise specified) Symbol Min. Typ. Max DSS - 0 ...

Page 3

... Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GS138K ISSUED DATE :2005/10/11 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ...

Page 4

... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS138K Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ...

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