EFC240B-180F Excelics Semiconductor, Inc., EFC240B-180F Datasheet

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EFC240B-180F

Manufacturer Part Number
EFC240B-180F
Description
Low Distortion Gaas Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
ISSUED 10/04/2006
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
FEATURES
ELECTRICAL CHARACTERISTICS (T
SYMBOL
SYMBOLS
BV
BV
PAE
G
P
I
G
R
2. Exceeding any of the above ratings may reduce MTTF below design goals.
DSS
V
NON-HERMETIC 180MIL METAL FLANGE PACKAGE
+31.0 dBm TYPICAL OUTPUT POWER
16.5 dB TYPICAL POWER GAIN AT 2GHz
0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
V
V
Igf
Igr
Pin
Tch
Tstg
Pt
1dB
1dB
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
th
M
P
DS
GS
GD
GS
3
N
4
PASSIVATION
Output Power at 1dB Compression
V
Gain at 1dB Compression
V
Power Added Efficiency at 1dB Compression
V
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
DS
DS
DS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
= 10 V, I
= 10 V, I
= 10 V, I
PARAMETERS/TEST CONDITIONS
PARAMETERS
DS
DS
DS
≈ 50% I
≈ 50% I
≈ 50% I
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
O
Phone: 408-737-1711 Fax: 408-737-1868 Web:
C
DSS
DSS
DSS
Specifications are subject to change without notice.
V
I
I
GD
GS
DS
a
V
V
DS
= 2.4 mA
= 2.4 mA
= 25°C)
DS
= 3 V, I
= 3 V, V
= 3 V, V
f = 2GHz
f = 2GHz
f = 4GHz
f = 4GHz
f = 2GHz
DS
ABSOLUTE
-65/175
1
= 6 mA
GS
10.8mA
-1.8mA
GS
29dBm
175
15V
6W
= 0 V
5V
= 0 V
Low Distortion GaAs Power FET
o
C
o
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1
www.excelics.com
MIN
29.0
15.0
320
200
-18
-10
EFC240B-180F
Caution! ESD sensitive device.
TYP
31.0
31.0
16.5
11.5
520
280
-2.5
-20
-17
22*
40
@ 3dB Compression
CONTINUOUS
-65/175
-0.6mA
Revised October 2006
3.6mA
175
-4.5V
10V
MAX
6W
-4.0
720
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page 1 of 1
2
UNITS
o
dBm
mA
mS
C/W
dB
%
V
V
V

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