EFC240B-100F Excelics Semiconductor, Inc., EFC240B-100F Datasheet
EFC240B-100F
Manufacturer Part Number
EFC240B-100F
Description
10-14V Low Distortion GAAS Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC240B-100F.pdf
(2 pages)
DATA SHEET
Low Distortion GaAs Power FET
ELECTRICAL CHARACTERISTICS (T
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
1dB
1dB
HERMETIC 100mil CERAMIC FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
HIGH BVgd FOR 10V BIAS
7.0dB TYPICAL POWER GAIN AT 8GHz
0.3 X 2400 MICRON RECESSED “MUSHROOM”
GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
3
2. Exceeding any of the above ratings may reduce MTTF below design goals.
N
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
4
Excelics
PASSIVATION
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Power Added Efficiency at 1dB Compression f=8GHz
Vds=10V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
O
C
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
60mA
29dBm
175
-65/175
6.3W
a
= 25
o
C
o
O
C
C)
f=8GHz
f=8GHz
10 Rad.
63 Dia.
1
G
256 TYP.
CONTINUOUS
All Dimensions In mils
10V
-4.5V
520mA
10mA
@ 3dB Compression
150
-65/150
5.2W
MIN
29.0
320
200
-15
-10
5.5
EFC240B-100F
o
C
o
C
TYP
31.0
256 TYP.
520
280
-2.5
22*
7.0
-20
-17
30
98
24
MAX
-4.0
720
2
D
UNIT
o
dBm
34
mA
C/W
30
mS
dB
%
V
V
V
98
24
79
35
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EFC240B-100F Summary of contents
Page 1
... TYP f=8GHz f=8GHz Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA ABSOLUTE CONTINUOUS 14V -8V Idss 60mA 29dBm o 175 C o -65/175 C 6.3W EFC240B-100F 256 TYP. 24 All Dimensions In mils MIN TYP MAX UNIT dBm 29.0 31.0 dB 5.5 7 320 520 720 mA 200 ...
Page 2
... EFC240B-100F DATA SHEET Low Distortion GaAs Power FET FREQ --- S11 --- GHz Mag 1.0 0.996 2.0 0.872 3.0 0.851 4.0 0.834 5.0 0.826 6.0 0.812 7.0 0.807 8.0 0.812 9.0 0.817 10.0 0.814 11.0 0.802 12.0 0.780 13.0 0.773 14.0 0.774 15.0 0.769 16.0 0.743 17.0 0.726 18.0 0.691 19.0 0.634 20.0 0.638 21.0 0.663 22.0 0.675 23.0 0.705 24.0 0.777 25.0 0.752 26.0 0.630 S-PARAMETERS 10V, 1/2 Idss ...