CMH05A TOSHIBA Semiconductor CORPORATION, CMH05A Datasheet

no-image

CMH05A

Manufacturer Part Number
CMH05A
Description
Toshiba High Efficiency Rectifier Silicon Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.CMH05A.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CMH05A
Manufacturer:
TOSHIBA
Quantity:
36 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CMH05A
Manufacturer:
BI
Quantity:
20 062
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
CMH05A
Manufacturer:
TOSHIBA
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
CMH05A
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
CMH05A
Quantity:
6 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CMH05A TE12L
Manufacturer:
TOSHIBA
Quantity:
36 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
CMH05A TE12R
Manufacturer:
TOSHIBA
Quantity:
36 000
Switching Mode Power Supply Applications
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Repetitive peak reverse voltage: V
Average forward current: I
Low forward voltage: V
Very fast reverse recovery time: trr =35ns (Max.)
Suitable for compact assembly due to small surface-mount package
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Note 1: Tℓ＝125°C
Note 2: Using continuously under heavy loads (e.g. the application of
Peak forward voltage
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
“M−FLAT
Characteristics
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TM
” (Toshiba package name)
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
Device mounted on a ceramic board
board size: 50 mm × 50 mm
soldering land: 2 mm ×2 mm
board thickness:0.64t
FM
=1.8 V (Max.)
F (AV)
(Ta = 25°C)
= 1.0 A
RRM
Symbol
V
V
R
R
(Ta = 25°C)
I
FM (1)
FM (2)
th (j-a)
RRM
th (j-ℓ)
Symbol
t
t
I
V
rr
fr
F (AV)
I
T
FSM
RRM
T
= 400 V
stg
j
CMH05A
I
I
V
I
I
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
FM
FM
F
F
RRM
= 1 A, di/dt = −30 A/μs
= 1.0 A
= 0.1 A (pulse test)
= 1.0 A (pulse test)
10 (50 Hz)
−40~150
−40~150
= 400 V (pulse test)
1.0 (Note 1)
Rating
400
1
Test Condition
⎯
Unit
°C
°C
V
A
A
Weight: 0.023 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.98
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3-4E1A
2006-11-08
―
―
CMH05A
Max
100
135
210
1.8
10
35
60
16
⎯
Unit: mm
°C/W
°C/W
Unit
μA
ns
ns
V

Related parts for CMH05A

Image
Part Number
Description
Manufacturer
Datasheet
Request R
CMH05
Part Number:
CMH05
Description:
Toshiba High Efficiency Rectifier Silicon Epitaxial Type
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
CMH05.pdf (5 pages)
CMS2-5.6/3/4.8-4S2
Part Number:
CMS2-5.6/3/4.8-4S2
Description:
CM Choke SMD
Manufacturer:
Yageo Corporation
S302H5V2
Part Number:
S302H5V2
Description:
CM-R, IR Control
Manufacturer:
Shanghai Qizheng Information & Electroni Co, Ltd
Datasheet:
S302H5V2.pdf (1 page)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG300J2YS40
Part Number:
MG300J2YS40
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG300J2YS40.pdf (2 pages)
MG100Q2YS11
Part Number:
MG100Q2YS11
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS11.pdf (5 pages)
MP7003
Part Number:
MP7003
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP7003.pdf (7 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)
MG1200V1US51
Part Number:
MG1200V1US51
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG1200V1US51.pdf (4 pages)
MIG300J101H
Part Number:
MIG300J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG300J101H.pdf (8 pages)
MG150J7KS50
Part Number:
MG150J7KS50
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG150J7KS50.pdf (6 pages)

CMH05A Summary of contents

Page 1

... R th (j-a) (soldering land × 6 mm) (board thickness: 1.6 t) Device mounted on a glass-epoxy board (board size × 50 mm) (soldering land: 2.1 mm × 1.4 mm) (board thickness: 1.6 t) ⎯ (j-ℓ) 1 CMH05A JEDEC ― JEITA ― TOSHIBA 3-4E1A Weight: 0.023 g (typ.) Min Typ. ...

Page 2

... Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. Unit: mm 1.4 2 CMH05A 2006-11-08 ...

Page 3

... Soldering land: 6.0 mm × 6.0 mm board thickness: 1.6 t Device mounted on a ceramic board: board size × Soldering land: 2.0 mm × 2.0 mm board thickness: 0.64 t 0.1 0 Time t (s) 3 CMH05A P – (AV) F (AV) 0.4 0.6 0.8 1.0 1.2 1.4 (A) F (AV) Ta max – (AV) Device mounted on a glass-epoxy board: board size × ...

Page 4

... C – 100 Ta = 25° MHz Reverse voltage V (V) R (Typ 100 4 CMH05A Surge forward current (non-repetitive 25° 100 Number of cycles 2006-11-08 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 CMH05A 20070701-EN 2006-11-08 ...

Related keywords