RN1107F TOSHIBA Semiconductor CORPORATION, RN1107F Datasheet - Page 2

• Manufacturer Part Number: RN1107F
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input Resistor
Resistor Ratio
Characteristic
RN1107F~1109F
RN1107F~1109F
RN1107F~1109F
RN1107F~1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
(Ta = 25° ° ° ° C)
V
Symbol
V
V
R1/R2
CE (sat)
I
I
I
I (OFF)
h
I (ON)
C
CBO
CEO
EBO
R1
f
FE
T
ob
Circuit
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
2
―
―
―
V
V
V
V
V
V
I
V
V
V
V
f = 1MHz
C
CB
CE
EB
EB
EB
CE
CE
CE
CE
CB
= 5mA, I
= 6V, I
= 7V, I
= 15V, I
= 50V, I
= 50V, I
= 5V, I
= 0.2V, I
= 5V, I
=10V, I
= 10V, I
Test Condition
C
C
B
C
C
C
―
―
C
E
B
E
= 0.25mA
= 0
= 0
C
= 10mA
= 0.1mA
= 5mA
= 0
= 0
= 0
= 0,
= 5mA
RN1107F~RN1109F
0.081
0.078
0.167
0.191
0.421
15.4
32.9
1.92
Min
0.7
1.0
2.2
0.5
0.6
1.5
―
―
80
80
70
―
―
―
7
0.213
0.468
Typ.
2.14
250
0.1
―
―
―
―
―
―
―
―
―
―
―
―
―
―
10
22
47
3
2001-06-07
0.145
0.311
0.232
0.515
0.15
1.16
28.6
61.1
2.35
Max
100
500
0.3
1.8
2.6
5.8
1.0
2.6
―
―
―
13
―
6
MHz
Unit
mA
kΩ
nA
nA
pF
―
―
V
V
V