XP133A1235SR TOREX SEMICONDUCTOR LTD., XP133A1235SR Datasheet

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XP133A1235SR

Manufacturer Part Number
XP133A1235SR
Description
N-channel Power Mosfet
Manufacturer
TOREX SEMICONDUCTOR LTD.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
XP133A1235SR
Manufacturer:
TOREX
Quantity:
20 000
Part Number:
XP133A1235SR-G
Manufacturer:
TOREX/特瑞仕
Quantity:
20 000
XP133A1235SR
Power MOSFET
■EQUIVALENT CIRCUIT
■GENERAL DESCRIPTION
The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics. Two FET devices are built into the one package
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION
■PIN ASSIGNMENT
■FEATURES
Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V)
Ultra High-Speed Switching
Driving Voltage
N-Channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package
■ABSOLUTE MAXIMUM RATINGS
* When implemented on a glass epoxy PCB
Storage Temperature Range
Channel Power Dissipation *
PIN NUMBER
Reverse Drain Current
Drain-Source Voltage
Channel Temperature
Drain Current (Pulse)
Gate-Source Voltage
Drain Current (DC)
5~6
7~8
PARAMETER
1
2
3
4
PIN NAME
: Rds(on)=0.048Ω(Vgs = 2.5V)
: 2.5V
: SOP-8
G1
G2
D2
D1
S1
S2
SYMBOL RATINGS UNITS
Vdss
Vgss
Tstg
Tch
Idp
Idr
Pd
Id
-55~150
FUNCTION
±12
150
20
20
Source
Source
6
6
2
Drain
Drain
Gate
Gate
ETR1112_001
Ta = 25℃
W
V
V
A
A
A
1/5

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XP133A1235SR Summary of contents

Page 1

... XP133A1235SR Power MOSFET ■GENERAL DESCRIPTION The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ...

Page 2

... XP133A1235SR ■ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER SYMBOL Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance * Forward Transfer Admittance * Body Drain Diode Forward Voltage * Effective during pulse test. Dynamic Characteristics PARAMETER SYMBOL Input Capacitance Output Capacitance Feedback Capacitance Switching Characteristics ...

Page 3

... PERFORMANCE CHARACTERISTICS XP133A1235SR 3/5 ...

Page 4

... XP133A1235SR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 4/5 ...

Page 5

... Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. XP133A1235SR 5/5 ...

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