XP161A11A1PR TOREX SEMICONDUCTOR LTD., XP161A11A1PR Datasheet
XP161A11A1PR
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XP161A11A1PR Summary of contents
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... XP161A11A1PR Power MOSFET ■GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ...
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... XP161A11A1PR ■ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER SYMBOL Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance*1 Forward Transfer Admittance *1 Body Drain Diode Forward Voltage *1 Effective during pulse test. Dynamic Characteristics PARAMETER SYMBOL Input Capacitance Output Capacitance Feedback Capacitance Switching Characteristics ...
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... PERFOMANCE CHARACTERISTICS XP161A11A1PR 3/5 ...
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... XP161A11A1PR ■TYPICAL PERFOMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 4/5 ...
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... Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. XP161A11A1PR 5/5 ...