HY27US0812B Hynix Semiconductor, HY27US0812B Datasheet - Page 2

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HY27US0812B

Manufacturer Part Number
HY27US0812B
Description
512mb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
Rev 0.5 / Jul. 2007
Revision
No.
0.0
0.1
0.2
0.3
0.4
0.5
Initial Draft.
1) Correct Figure 14 & 15
1) Add AC Characteristics
- tRB : Last RE High to busy (at sequential read)
- tCRY : CE High to Ready (in case of interception by CE at read)
- tCEH : CE High Hold Time (at the last serial read)
1) Add sequential row read feature and figure
2) Modify Block Replacement
1) Add x16 Characteristics
2) Modify read2 operation (sequential row read)
3) Add AC Characteristics
- tOH : RE or CE High to Output Hold
1) Correct Read ID Table 16
2) Correct System Interface Using CE don’t care operation
3) Correct Command Set Table 5
History
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US(08/16)12(1/2)B Series
May. 29. 2007
Oct. 19. 2006
Mar. 26. 2007
Mar. 07. 2007
Draft Date
Apr. 27. 2007
Jul. 20. 2007
Preliminary
Remark
2

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