CMF04 TOSHIBA Semiconductor CORPORATION, CMF04 Datasheet - Page 3

• Manufacturer Part Number: CMF04
• Description: Diodes Toshiba Fast Recovery Diode Silicon Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
160
140
120
100
0.1
10
80
60
40
20
12
10
1
0
8
6
4
2
0
0
0
1
Pulse test
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
Instantaneous forward voltage V F
0.1
Average forward current I
Device mounted on a glass-epoxy board
1.0
α = 60°
0.2
T j = 150°C
3
Surge forward current
75°C
Ta max – I
Number of cycles
0.3
(non-repetitive)
2.0
i
F
0.4
– v
25°C
10
120°
F
F (AV)
3.0
180°
0.5
F (AV)
30
0.6
Rectangular
4.0
Conduction
angle: α
waveform
0°
(A)
50
α
(V)
0.7
360°
100
5.0
0.8
3
1000
160
140
120
100
100
1.6
1.2
0.8
0.4
80
60
40
20
10
0.001
0
0
1
0
0
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 2.1 mm × 1.4 mm,
board thickness: 1.6 ｍｍ)
0.1
Average forward current I
Average forward current I
0.1
Device mounted on a ceramic board
(board size: 50 mm × 50 mm,
land size: 2 mm × 2 mm,
board thickness: 0.64 ｍｍ)
0.01
α = 60°
0.2
0.2
α = 60°
P
T
0.3
F (AV)
ℓ max – I
0.1
Time t (s)
0.3
0.4
r
– I
th (j-a)
120°
120°
F (AV)
F (AV)
1
0.5
0.4
– t
180°
F (AV)
F (AV)
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 6 mm × 6 mm,
board thickness: 1.6 ｍｍ)
Conduction angle α
180°
0.6
0°
Rectangular
waveform
10
Rectangular
Conduction
angle: α
waveform
0°
α
0.5
(A)
(A)
360°
α
0.7
360°
2008-05-13
100
CMF04
0.6
0.8
1000