2N70 Unisonic Technologies, 2N70 Datasheet - Page 2

• Manufacturer Part Number: 2N70
• Description: 2 Amps, 700 Volts N-channel Power Mosfet
• Manufacturer: Unisonic Technologies

2N70
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ABSOLUTE MAXIMUM RATINGS (
THERMAL DATA
ELECTRICAL CHARACTERISTICS
2. Repetitive Rating : Pulse width limited by T
3. L=45mH, I
4. I
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SD
UNISONIC TECHNOLOGIES CO., LTD
≤2.0A, di/dt≤200A/μs, V
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
AS
=2.0A, V
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
TO-220F
TO-251/TO-252
TO-220/TO-220F
TO-251/TO-252
TO-220
TO-220F
TO-251/TO-252
DD
=50V, R
Forward
Reverse
DD
≤ BV
G
=25 Ω, Starting T
△BV
DSS
SYMBOL
R
V
BV
, Starting T
C
C
C
I
I
GS(TH)
DS(ON)
DSS
DSS
GSS
OSS
RSS
ISS
DSS
T
(T
J
/ T
C
△
J
= 25°С, unless otherwise specified)
=25°С, unless otherwise specified)
SYMBOL
SYMBOL
J
V
V
V
V
I
V
V
V
V
dv/dt
V
T
T
D
E
E
J
I
I
θ
θ
P
T
J
GS
DS
GS
GS
DS
GS
DS
OPR
DSS
GSS
I
DM
STG
AR
D
AS
AR
= 25°C
JA
= 250 μA, Referenced to 25°C
Jc
D
J
= 25°C
=25V, V
= 0V, I
= 700V, V
= 30V, V
= -30V, V
= V
= 10V, I
TEST CONDITIONS
GS
, I
D
D
GS
D
= 250μA
DS
= 250μA
DS
=1A
GS
=0V, f =1MHz
= 0V
= 0V
= 0V
-55 ~ +150
-55 ~ +150
RATINGS
RATINGS
+150
62.5
2.76
4.46
4.24
110
700
±30
140
2.0
2.0
8.0
2.8
4.5
45
28
30
MIN TYP MAX UNIT
700
2.0
Power MOSFET
270
0.4
5.0
38
5
-100
QW-R502-334.B
100
350
4.0
6.3
10
50
7
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
UNIT
V/ns
mJ
mJ
°С
°С
°С
2 of 6
W
W
W
V
V
A
A
A
V/°С
μA
nA
nA
pF
pF
pF
V
V
Ω