1N70 Unisonic Technologies, 1N70 Datasheet

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1N70

Manufacturer Part Number
1N70
Description
1.2 Amps, 700 Volts N-channel Mosfet
Manufacturer
Unisonic Technologies
Datasheet

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1N70
1.2 Amps, 700 Volts
N-CHANNEL MOSFET
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
* R
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1.Gate
DS(ON)
The UTC 1N70 is a high voltage MOSFET and is designed to
ORDERING INFORMATION
DESCRIPTION
FEATURES
SYMBOL
1N70-T92-B
1N70-T92-K
=11.5Ω@V
Normal
Ordering Number
UNISONIC TECHNOLOGIES CO., LTD
GS
2.Drain
3.Source
= 10V.
Lead Free Plating
1N70L-T92-B
1N70L-T92-K
RSS
= typical 3.0 pF)
Package
TO-92
TO-92
G
G
1
Pin Assignment
*Pb-free plating product number: 1N70L
D
D
2
S
S
3
Power MOSFET
Tape Box
Packing
Bulk
QW-R502-171,A
1 of 8

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1N70 Summary of contents

Page 1

... Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient converters and bridge circuits ...

Page 2

... ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Power Dissipation Junction Temperature Operating Temperature Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...

Page 4

... TEST CIRCUITS AND WAVEFORMS P.W. (Driver (D.U.T (D.U.T.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw + D.U. Driver * dv/dt controlled Same Type * D.U.T.-Device Under Test GS as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit Period I , Body Diode Forward Current FM Body Diode Reverse Current Body Diode Recovery dv/dt ...

Page 5

... TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit 10V t p Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform L BV DSS ...

Page 6

... TYPICAL CHARACTERISTICS Output Characteristics V GS Top: 15.0V 10.0V 8.0V 0 7.0V 10 6.5V 6.0V Bottorm:5. 250μs Pulse Test - Drain-Source Voltage, V On-Resistance vs. Drain Current 30 T =25℃ =20V 1.5 0.0 1.0 0.5 Drain Current, I UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 =25℃ (V) DS ...

Page 7

... TYPICAL CHARACTERISTICS(Cont.) Max. Safe Operating Area Operation in This Area is Limited DS(on =25℃ =150℃ J Single Pulse - Drain-Source Voltage, V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.2 0.9 100μs 1ms 10ms 0.6 DC 0.3 0 (V) DS Power MOSFET Max ...

Page 8

... UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

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