MA6X129 Panasonic Corporation of North America, MA6X129 Datasheet

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MA6X129

Manufacturer Part Number
MA6X129
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Rectifier Diodes
MA6X129
Silicon epitaxial planar type
For small power current rectification
■ Features
■ Absolute Maximum Ratings T
Note) * : t = l s
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004
• Three isolated elements are contained in one package, allowing
• Allowing high voltage rectification
Reverse voltage
Maximum peak reverse voltage
Output current
Repetitive peak forward Single
current
Non-repetitive peak
forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
high-density mounting
2. Absolute frequency of input and output is 3 MHz.
Parameter
Parameter
*
Triple
Triple
Single
Triple
Single
(MA129)
Symbol
V
I
I
T
V
FRM
FSM
I
T
RM
O
stg
R
a
j
Symbol
= 25°C ± 3°C
V
C
I
a
R
F
t
= 25°C
−55 ∼ +150
Rating
1 000
200
200
200
100
600
200
350
150
I
V
V
F
Note) The part number in the parenthesis shows conventional part number.
R
R
= 200 mA
SKC00003BED
= 200 V
= 0 V, f = 1 MHz
Unit
mA
mA
mA
°C
°C
V
V
Conditions
Marking Symbol: M4F
Internal Connection
EIAJ : SC-74
10˚
0.30
0.50
4
3
+0.10
–0.05
+0.10
–0.05
(0.95)
2.90
2
1.9
5
Min
±0.1
+0.20
–0.05
(0.95)
6
5
4
6
1
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
Typ
4.5
Mini6-G1 Package
Max
200
1.2
1
2
3
0.16
4 : Anode 3
5 : Anode 2
6 : Anode 1
+0.10
–0.06
Unit: mm
Unit
nA
pF
V
1

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MA6X129 Summary of contents

Page 1

... Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type For small power current rectification ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Allowing high voltage rectification ■ Absolute Maximum Ratings T Parameter Symbol Reverse voltage V Maximum peak reverse voltage ...

Page 2

... MA6X129  100°C 25° 150°C −20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V (V) F  200 V V 100 −1 10 −2 10 −3 10 − 120 160 200 ( °C ) Ambient temperature T ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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