MA6X718 Panasonic Corporation of North America, MA6X718 Datasheet

MA6X718

Manufacturer Part Number

MA6X718

Description

Silicon Epitaxial Planar Type

Manufacturer

Panasonic Corporation of North America

Datasheet

1.MA6X718.pdf (3 pages)

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Schottky Barrier Diodes (SBD)

MA6X718

Silicon epitaxial planar type

For switching

For wave detection

■ Features

■ Absolute Maximum Ratings T

Note) * : Value for single diode

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Publication date: April 2004

• Three isolated elements are contained in one package, allowing

• Two MA3X704A (MA704A) is contained in one package (of a

• Forward voltage V

• Optimum for high frequency rectification because of its short

Detection efficiency

Reverse voltage

Peak forward current

Forward current

Junction temperature

Storage temperature

Forward voltage

Reverse current

Terminal capacitance

Reverse recovery time

high-density mounting

type in the same direction)

reverse recovery time t

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

3. Absolute frequency of input and output is 2 GHz.

4. * : t

and the leakage of current from the operating equipment.

Parameter

measurement circuit

, optimum for low voltage rectification

Pulse Generator

(PG-10N)

= 50 Ω

Bias Application Unit (N-50BU)

(MA718)

Symbol

stg

Symbol

= 25°C ± 3°C

Wave Form Analyzer

(SAS-8130)

= 50 Ω

= 25°C

−55 to +125

Rating

150

125

Note) The part number in the parenthesis shows conventional part number.

= 1 mA

= I

= 30 mA

= 1 mA , R

SKH00112BED

= 3.9 kΩ, C

= 30 V

= 1 V, f = 1 MHz

= 3 V

= 10 mA

(peak)

Unit

°C

Conditions

Input Pulse

10%

δ = 0.05

90%

, f = 30 MHz

= 0.35 ns

= 2 µs

= 100 Ω

= 10 pF

Marking Symbol: M2N

Internal Connection

EIAJ : SC-74

10˚

Output Pulse

= 10 mA

0.30

0.50

= 100 Ω

(0.95)

+0.10

–0.05

+0.10

–0.05

= 1 mA

2.90

1.9

+0.20

–0.05

±0.1

(0.95)

Min

Typ

1.5

1.0

Mini6-G1 Package

Max

0.4

1.0

0.16

1 : Cathode 1

2 : Cathode 2

3 : Cathode 3

4 : Anode 3

5 : Anode 2

6 : Anode 1

+0.10

–0.06

Unit: mm

Unit

µA

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MA6X718 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MA6X718 (MA718) Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Forward voltage V ...

Page 2

... MA6X718  75°C 25° 125°C −20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F  −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature  ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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