SIB800EDK Vishay, SIB800EDK Datasheet
SIB800EDK
Related parts for SIB800EDK
SIB800EDK Summary of contents
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... 1. Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... SiB800EDK Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed copper (not plated result of the singulation process in manufacturing ...
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... °C, unless otherwise noted 0.01 100 125 150 120 Reverse Voltage (V) KA Capacitance SiB800EDK Vishay Siliconix Min. Typ. Max. 0.23 0.29 0.11 0.14 0.32 0.38 0.005 0.050 0.150 1 150 ° °C J 0.0 0.2 0.4 0.6 0 Forward Voltage (V) ...
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... SiB800EDK Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 www.vishay.com 4 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) ...
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... thru 1 0.8 0 0.0 2.0 2.5 3 2.5 3.0 3.5 4.0 SiB800EDK Vishay Siliconix - 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-to-Source Voltage ° 125 ° ° ...
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... SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T 1.7 1.6 1 4.5 V, 2 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 Junction Temperature (°C) J Normalized On-Resistance vs. Junction Temperature 1 1 0.8 0.6 0.4 0.2 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.9 0.8 0.7 0.6 0.5 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 New Product = 25 °C, unless otherwise noted ...
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... Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product = 25 °C, unless otherwise noted 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB800EDK Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 7 ...
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... SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...