SIB800EDK Vishay, SIB800EDK Datasheet - Page 4

• Manufacturer Part Number: SIB800EDK
• Description: N-channel 20-v D-s Mosfet With Trench Schottky Diode
• Manufacturer: Vishay

SiB800EDK
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.01
0.1
0.1
1
1
10
10
-4
-4
Duty Cycle = 0.5
Duty Cycle = 0.5
0.1
0.2
0.1
0.2
Single Pulse
Single Pulse
0.02
0.02
10
0.05
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
A
10
= 25 °C, unless otherwise noted
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
= P
S-83045-Rev. B, 22-Dec-08
t
2
Document Number: 68860
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 100 °C/W
1000
1