SIB800EDK Vishay, SIB800EDK Datasheet - Page 7

• Manufacturer Part Number: SIB800EDK
• Description: N-channel 20-v D-s Mosfet With Trench Schottky Diode
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS T
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
4
3
2
1
0
0
Package Limited
25
D
T
is based on T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
A
150
= 25 °C, unless otherwise noted
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB800EDK
www.vishay.com
125
150
7