AO4614 Alpha & Omega Semiconductor, AO4614 Datasheet - Page 5

• Manufacturer Part Number: AO4614
• Description: Complementary Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductor

AO4614
Alpha & Omega Semiconductor, Ltd.
P-Channel Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
A: The value of R
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
T
Rev8 : Oct 2007
DSS
GSS
D(ON)
S
SM
D(on)
r
D(off)
f
rr
T
t ≤ 10s thermal resistance rating.
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
A
A
(10V)
(4.5V)
=25°C. The SOA curve provides a single pulse rating.
DSS
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
θJA
θJA
is the sum of the thermal impedence from junction to lead R
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
θJA
θJA
is measured with the device mounted on 1in
is measured with the device mounted on 1in
Parameter
B
J
=25°C unless otherwise noted)
2
2
FR-4 board with 2oz. Copper, in a still air environment with T
FR-4 board with 2oz. Copper, in a still air environment with
2
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
I
FR-4 board with 2oz. Copper, in a still air environment with T
D
S
F
F
FR-4 board with 2oz. Copper, in a still air environment with
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-5A, dI/dt=100A/μs
=-5A, dI/dt=100A/μs
=-10mA, V
=-1A,V
GEN
=-32V, V
=0V, V
=V
=-10V, V
=-10V, I
=-4.5V, I
=-5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
θJL
=3Ω
θJL
GS
and lead to ambient.
and lead to ambient.
GS
I
D
D
GS
DS
DS
=0V
=-250μA
=-4.8A
D
D
GS
GS
=±20V
DS
=-20V, f=1MHz
=0V, f=1MHz
DS
DS
=-5A
=-2A
=0V
=0V
=-5V
=-20V, I
=-20V, R
D
T
L
=-5A
=4Ω,
T
J
=125°C
J
=55°C
Min
-1.5
-40
-20
-0.75
34.7
50.6
13.6
11.2
22.3
15.2
Typ
-1.9
657
143
6.5
6.8
1.8
3.9
7.5
6.7
52
12
63
26
A
=25°C. The SOA
A
=25°C. The
www.aosmd.com
±100
Max
-2.5
870
200
110
-20
8.5
2.5
45
65
63
10
17
10
34
15
29
20
-1
-5
-3
-1
5
9
Units
mΩ
mΩ
μA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A
A