HAT2215R Renesas Electronics Corporation., HAT2215R Datasheet
HAT2215R
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HAT2215R Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current ...
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... HAT2215R, HAT2215RJ Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage HAT2215R drain current HAT2215RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance ...
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... HAT2215R, HAT2215RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 10 4 Pulse Test 0 5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT2215R, HAT2215RJ Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 150 100 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics ...
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... HAT2215R, HAT2215RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Switching Time Test Circuit Vin Monitor Rg Vin 10 V Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Rev.3.00 Dec. 22, 2004 page 2.0 1.6 1 – 0.8 0.4 Pulse Test ...
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... HAT2215R, HAT2215RJ Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Rev.3.00 Dec. 22, 2004 page θch - f(t) = γs (t) x θ θ ...
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... HAT2215R, HAT2215RJ Package Dimensions 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *Dimension including the plating thickness Base material dimension Ordering Information Part Name HAT2215R-EL-E 2500 pcs HAT2215RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...