HAT2215R Renesas Electronics Corporation., HAT2215R Datasheet - Page 5

• Manufacturer Part Number: HAT2215R
• Description: Transistors>switching/mosfets Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2215R, HAT2215RJ
Main Characteristics
Rev.3.00 Dec. 22, 2004 page 3 of 7
500
400
300
200
100
10
4.0
3.0
2.0
1.0
5
0
0
0
Drain to Source Saturation Voltage vs
Pulse Test
Test Condition :
Drain to Source Voltage V
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
Gate to Source Voltage
4.5 V
10 V
5
50
10
100
5
V
Pulse Test
15
GS
150
V
Ta (°C)
DS
GS
I
D
= 2.8 V
3.4 V
= 2 A
0.5 A
3.2 V
3.0 V
1 A
(V)
(V)
20
10
200
0.001
0.01
1000
100
0.1
10
10
100
10
5
1
Static Drain to Source on State Resistance
0.1
0
0.1
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
Note 4 :
Drain to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Gate to Source Voltage
Typical Transfer Characteristics
V
Maximum Safe Operation Area
GS
= 4.5 V
Drain Current
2
10 V
vs. Drain Current
DS(on)
1
1
3
−25°C
Tc = 75°C
25°C
10
I
D
10
V
Pulse Test
DS
Pulse Test
(A)
4
V
DS
= 10 V
GS
(V)
(V)
100
5
100