HAT1038R Renesas Electronics Corporation., HAT1038R Datasheet

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HAT1038R

Manufacturer Part Number
HAT1038R
Description
Silicon P Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
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Part Number:
HAT1038R
Manufacturer:
RENESAS
Quantity:
30 000
Part Number:
HAT1038R
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT1038R-EL
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT1038R-EL-E
Manufacturer:
RENESAS/瑞萨
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20 000
Part Number:
HAT1038R-EL-EQ
Manufacturer:
HITACHI
Quantity:
1 875
Part Number:
HAT1038R-EL-EQ
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT1038R-TL
Manufacturer:
HITACHI
Quantity:
8 000
Part Number:
HAT1038RJ-EL
Manufacturer:
HITACHI
Quantity:
8 000
Part Number:
HAT1038RJ-EL
Manufacturer:
HITACHI/日立
Quantity:
20 000
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.5.00 Sep 07, 2005 page 1 of 7
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4 V gate drive
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
2
MOS1
D
S
7 8
1
D
G
4
MOS2
D
S
5 6
3
D
(Previous: ADE-208-663C)
1, 3
2, 4
5, 6, 7, 8
REJ03G1150-0500
Source
Gate
Drain
Sep 07, 2005
Rev.5.00

Related parts for HAT1038R

HAT1038R Summary of contents

Page 1

... HAT1038R, HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code "J") Low on-resistance Capable gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> Rev.5.00 Sep 07, 2005 page ...

Page 2

... HAT1038R, HAT1038RJ Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2 ...

Page 3

... HAT1038R, HAT1038RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –10 –10 V –5 V –4 V –8 –6 –4 – –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs ...

Page 4

... HAT1038R, HAT1038RJ Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0.3 –0 – 0.2 0.1 – – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ –0.1 –0.2 –0.5 –1 Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT1038R, HAT1038RJ Reverse Drain Current vs. Source to Drain Voltage –10 –8 –6 –10 V –4 –5 V – –0.4 –0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) ...

Page 6

... HAT1038R, HAT1038RJ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω –15 V Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –10 V Rev.5.00 Sep 07, 2005 page Monitor D.U Vin Vout Monitor –30 V Vout t d(on) Avalanche Waveform V 1 DSS 2 = • L • I • ...

Page 7

... HAT1038R, HAT1038RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT1038R-EL-E 2500 pcs HAT1038RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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