HAT1038R Renesas Electronics Corporation., HAT1038R Datasheet - Page 2

• Manufacturer Part Number: HAT1038R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1038R, HAT1038RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak voltage
Gate to source leak current
Zero gate voltage drain
current
Zero gate voltage drain
current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.5.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Value at Tch = 25 C, Rg
5. Pulse test
10 s, duty cycle
Item
Item
HAT1038R
HAT1038RJ
HAT1038R
HAT1038RJ
HAT1038R
HAT1038RJ
HAT1038R
HAT1038RJ
1%
50
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
I
I
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
E
Symbol
I
AP
AR
V
V
–1.2
Tstg
Min
–60
Tch
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
3
Note 4
D
Note 4
Note 2
Note 3
Note 1
–0.98
0.12
0.16
Typ
600
290
100
4.5
75
11
30
55
70
—
—
—
—
—
—
—
—
–1.28
Max
–0.1
–2.2
0.15
0.23
–10
40
40
–1
—
—
—
—
—
—
—
—
—
—
—
—
10
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
–3.5
–3.5
–3.5
1.05
–60
–28
150
Unit
—
—
20
2
3
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
A
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
DS
GS
GS
DD
F
= –3.5 A, V
= –3.5 A, V
= –10 mA, V
= –2 A, V
= –2 A, V
= –2 A, V
= 100 A, V
/dt = 50 A/ s
= –60 V, V
= –48 V, V
= –10 V, I
= –10 V
= 16 V, V
= 0
= –10 V, I
10 s
10 s
Test Conditions
–30 V
GS
GS
DS
GS
GS
D
D
= –10 V
= –4 V
= –10 V
GS
DS
GS
GS
DS
= –1 mA
= –2 A,
Unit
= 0
= 0
mJ
(Ta = 25 C)
(Ta = 25 C)
—
—
W
W
V
V
A
A
A
A
= 0
= 0
= 0
= 0
C
C
= 0
Note 5
Note 5
Note 5
Note 5