NTMFS4120N ON Semiconductor, NTMFS4120N Datasheet - Page 2

• Manufacturer Part Number: NTMFS4120N
• Description: Power Mosfet 30 V, 31 A, Single N-channel So-8 Flat Lead
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
emperature Coefficient
T
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
GSS
G(TH)
t
DSS
R
OSS
RSS
RR
t
t
ISS
t
FS
GS
GD
t
SD
RR
a
b
r
f
G
/T
/T
J
http://onsemi.com
J
NTMFS4120N
V
V
V
V
GS
GS
GS
GS
V
= 0 V, V
= 0 V, f = 1.0 MHz, V
GS
V
= 0 V, I
= 4.5 V, V
2
V
V
V
GS
V
I
V
V
D
GS
GS
DS
= 0 V, dI
GS
GS
DS
= 1.0 A, R
= 4.5 V, V
Test Condition
= V
= 0 V, I
= 0 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
S
DS
I
S
= 6.0 A
DS
DS
= 24 V
= 6.0 A
S
, I
/dt = 100 A/ms,
D
= 15 V, I
D
GS
G
DS
D
= 250 mA
D
D
= 250 mA
= 3.0 W
= 26 A
= 26 A
= 24 A
= 20 V
= 15 V,
T
T
T
T
DS
J
D
J
J
J
= 125°C
= 125°C
= 24 A
= 25°C
= 25°C
= 24 V
Min
1.0
30
3600
0.74
Typ
640
380
7.4
3.5
4.2
4.4
1.0
0.6
21
35
33
13
14
24
32
27
31
36
18
18
34
Max
100
1.0
2.5
4.5
5.5
1.0
10
50
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
W
V
V
S
V