NTMFS4120N ON Semiconductor, NTMFS4120N Datasheet - Page 4

• Manufacturer Part Number: NTMFS4120N
• Description: Power Mosfet 30 V, 31 A, Single N-channel So-8 Flat Lead
• Manufacturer: ON Semiconductor

1000
1000
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.01
6000
5000
4000
3000
2000
1000
100
100
0.1
10
10
1
0
0.1
0
1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
V
I
V
D
C
GS
DD
GS
= 1 A
= 25°C
V
= 20 V
DS
= 15 V
= 4.5 V
C
C
Figure 9. Resistive Switching Time
t
C
d(off)
oss
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
rss
iss
Figure 7. Capacitance Variation
Variation vs. Gate Resistance
5
R
R
THERMAL LIMIT
PACKAGE LIMIT
G
DS(on)
, GATE RESISTANCE (OHMS)
Safe Operating Area
1
t
LIMIT
d(on)
10
10
t
f
15
10
TYPICAL PERFORMANCE CURVES
t
r
20
T
J
= 25°C
10 ms
100 ms
10 ms
http://onsemi.com
dc
1 ms
NTMFS4120N
100
100
25
4
5
4
3
2
1
0
500
450
400
350
300
250
200
150
100
0
45
40
35
30
25
20
15
10
50
5
0
0
0.5
25
V
T
Figure 10. Diode Forward Voltage vs. Current
Drain-To-Source Voltage vs. Total Charge
J
GS
Figure 12. Maximum Avalanche Energy vs
5
Q
V
= 25°C
GS
SD
= 0 V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Q
Figure 8. Gate-To-Source and
0.6
T
50
Starting Junction Temperature
G
J
10
, TOTAL GATE CHARGE (nC)
, JUNCTION TEMPERATURE (°C)
15
0.7
75
QT
Q
20
GD
100
0.8
25
V
V
I
T
D
DD
GS
J
= 24 A
= 25°C
125
V
= 15 V
= 4.5 V
30
0.9
GS
I
D
= 30 A
35
150
1.0