SIR866DP Vishay, SIR866DP Datasheet - Page 3

• Manufacturer Part Number: SIR866DP
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68751
S-81712-Rev. A, 04-Aug-08
0.0024
0.0022
0.0020
0.0018
0.0016
0.0014
80
64
48
32
16
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0
0.0
0
0
I
V
D
GS
= 15 A
V
16
0.5
16
DS
= 10 thru 4 V
V
DS
Q
= 15 V
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
V
V
V
D
GS
DS
GS
- Drain Current (A)
Gate Charge
1.0
32
32
= 10 V
= 4.5 V
= 10 V
V
1.5
48
48
DS
= 20 V
V
GS
64
2.0
64
= 3 V
2.5
80
80
6000
4800
3600
2400
1200
1.7
1.5
1.3
1.1
0.9
0.7
10
8
6
4
2
0
0
- 50
0
0
C
rss
I
On-Resistance vs. Junction Temperature
D
- 25
= 10 A
T
C
T
C
= 125 °C
4
1
V
V
= 25 °C
DS
T
GS
Transfer Characteristics
0
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
Capacitance
25
8
2
C
50
oss
Vishay Siliconix
T
V
C
12
3
GS
75
= - 55 °C
SiR866DP
= 10 V
V
100
www.vishay.com
GS
16
4
= 4.5 V
125
150
20
5
3