SIR866DP Vishay, SIR866DP Datasheet - Page 4

• Manufacturer Part Number: SIR866DP
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiR866DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
0.01
100
= 25 °C
Limited by R
0.1
10
100
1
0.01
I
D
1.0
Single Pulse
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
T
125
A
GS
= 25 °C
DS(on)
> minimum V
V
1.2
150
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
10
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-81712-Rev. A, 04-Aug-08
Document Number: 68751
T
J
T
6
= 125 °C
J
= 25 °C
7
1
I
D
8
= 20 A
9
10
1
0