TK50X15J1 TOSHIBA Semiconductor CORPORATION, TK50X15J1 Datasheet

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TK50X15J1

Manufacturer Part Number
TK50X15J1
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
DC-DC Converters
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Note:
Thermal resistance, channel to case
Note 1: Ensure that the channel temperature does not exceed 175℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
Note 4: The definitions of the absolute maximum channel and storage
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
temperature
temperatures are base on from AEC-Q101.
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
= 50V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 110 μH, R
(Note 1)
= 2.0 to 4.0 V (V
(Note 2)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
TK50X15J1
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
P
DSS
GSS
DP
AR
I
| = 90 S (typ.)
AS
AR
stg
D
ch
R
D
Symbol
DS
th (ch-c)
=22 mΩ (typ.)
DS
= 10 V, I
= 150 V)
−55 to 175
Rating
10.9
150
150
±20
150
125
182
175
G
D
50
50
1
= 25 Ω, I
= 1 mA)
Max
1.2
AR
Unit
mJ
mJ
°C/W
°C
°C
W
V
V
V
A
A
Unit
= 50A
Weight: 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
Note: Use the S1 pin to return
the gate signal to source.
Board
designed so the main current
flows to the S2 pin.
Circuit Configuration
1
2
traces
TK50X15J1
2-9F1B
SC-97
2008-03-26
should
4
3
Unit: mm
be

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TK50X15J1 Summary of contents

Page 1

... T °C stg Symbol Max Unit R 1.2 °C/W th (ch- Ω 50A TK50X15J1 Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration Note: Use the S1 pin to return the gate signal to source. Board traces should be designed so the main current flows to the S2 pin. ...

Page 2

... DRP DRP DS2F /dt = 100 A/μ TK50X15J1 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 10 ⎯ ⎯ 150 ⎯ ⎯ 95 ⎯ 2.0 4.0 ⎯ ⎯ ⎯ ⎯ 4300 ⎯ ...

Page 3

... Drain-source voltage V 2 1.6 1.2 0.8 0 Gate-source voltage V 100 Common source Tc = 25°C Pulse test 10 1 100 1 3 TK50X15J1 I – 5.5 5.1 5.2 5 4.9 4.8 4.7 4 4.5 V Common source Tc = 25°C pulse test ( – Common source Tc = 25°C Pulse test ...

Page 4

... C rss −80 −40 100 Dynamic input/output characteristics 160 140 120 120 100 200 0 4 TK50X15J1 − Common source Tc = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 Drain-source voltage V (V) DS − ...

Page 5

... Channel temperature (initial) Tch (°C) 1000 Test circuit = 25 Ω 110 μ TK50X15J1 – 100 125 150 175 B VDSS Wave form ⎛ ⎞ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK50X15J1 20070701-EN GENERAL 2008-03-26 ...

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