TK50X15J1 TOSHIBA Semiconductor CORPORATION, TK50X15J1 Datasheet - Page 3

• Manufacturer Part Number: TK50X15J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
50
40
30
20
10
80
60
40
20
10
0
0
1
0
1
0
Common source
Tc = 25°C
pulse test
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
0.4
Drain-source voltage V
Gate-source voltage V
2
Drain current I
10
8
0.8
⎪Y
I
I
6
25
Tc = −55°C
D
D
100
fs
– V
– V
10
⎪ − I
4
DS
GS
1.2
D
D
Tc = −55°C
25
5
DS
GS
(A)
6
(V)
(V)
100
V GS = 4.2V
1.6
4.9
4.8
4.5
4.7
4.6
2.0
100
8
3
100
100
1.6
1.2
0.8
0.4
80
60
40
20
10
0
2
0
1
0
0
1
Common source
Tc = 25°C
Pulse test
10
8
6
Drain-source voltage V
4
Gate-source voltage V
2
Drain current I
10
5.5
R
V GS = 10 V
V
DS (ON)
4
8
I
D
DS
– V
– V
DS
GS
− I
12
5.2
6
D
D
100
DS
GS
(A)
Common source
Tc = 25°C
pulse test
Common source
Tc = 25°C
Pulse test
I D = 50 A
(V)
(V)
V GS = 4.5 V
16
8
TK50X15J1
5.1
25
12
2008-03-26
4.9
4.8
4.7
4.6
5
1000
10
20