SLD323XT Sony Electronics, SLD323XT Datasheet

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SLD323XT

Manufacturer Part Number
SLD323XT
Description
1w High Power Laser Diode
Manufacturer
Sony Electronics
Datasheet
Description
diode produced by MOCVD method
the SLD300 Series, this laser diode has a high
brightness output with a doubled optical density
which can be achived by QW-SCH structure
possible by controllingthe temperature using the built-
in TE cooler (Peltier element).
Features
• High power
• Low operating current: Iop = 1.4A (Po = 1.0W)
• Flat package with built-in photo diode, TE cooler, and thermistor
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
Operating Lifetime
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tth)
• Storage temperature
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
1
2
The SLD323XT is a high power, gain-guided laser
Fine adjustment of the oscillation wavelength is
Recommended optical power output: Po = 1.0W
AlGaAs quantum well structure laser diode
MTTF 10,000H (effective value) at Po = 1.0W, Tth = 25°C
MOCVD: Metal Organic Chemical Vapor Deposition
QW-SCH: Quantum Well Separate Confinement
Heterostructure
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
1W High Power Laser Diode
Pomax
V
Topr
Tstg
R
1
. Compared to
LD
PD
2
.
–10 to +30
–40 to +85
1.1
15
2
– 1 –
°C
°C
W
V
V
SLD323XT
Pin Configuration (Top View)
Equivalent Circuit
No.
1
1
2
3
4
5
6
7
8
2
M-273
T
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
H
1
3
N
TE Cooler
4
Function
LD
5
P
6
8
PD
E93208C19-PS
7
8

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SLD323XT Summary of contents

Page 1

... High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure Fine adjustment of the oscillation wavelength is possible by controllingthe temperature using the built cooler (Peltier element) ...

Page 2

... Differential efficiency Thermistor resistance Wavelength Selection Classification Type Wavelength (nm) SLD323XT-1 795 ± 5 SLD323XT-2 810 ± 10 SLD323XT-3 830 ± 10 Type Wavelength (nm) SLD323XT-21 798 ± 3 SLD323XT-24 807 ± 3 SLD323XT-25 810 ± 3 (Tth: Thermistor temperature, Tth = 25°C) Min. Symbol Conditions Ith Iop P = 1.0W O Vop ...

Page 3

... Imon – Monitor current [mA] Power dependence of far field pattern (Parallel to junction) Tth = 1000mW 800mW 600mW 400mW 200mW O –60 – Angle [degree] (Parallel to junction 1000mW O Tth = 25 C Tth = 10 C Tth = –5 C –60 – Angle [degree] SLD323XT 90 90 ...

Page 4

... Dependence of wavelength Po = 1000mW Tth – Thermistor temperature [ C] Thermistor characteristics – Tth – Thermistor temperature [ C] TE cooler characteristics 2 Tth = 100 T – Temperature difference [ C] SLD323XT ...

Page 5

... Power dependence of spectrum 1.0 Tth = 400mW 0.8 0.6 0.4 0.2 802 804 806 Wavelength [nm] 1.0 Tth = 800mW 0.8 0.6 0.4 0.2 802 804 806 Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 808 810 1.0 0.8 0.6 0.4 0.2 808 810 – 5 – Tth = 600mW 802 804 806 808 810 Wavelength [nm] Tth = 1000mW 802 804 806 808 810 Wavelength [nm] SLD323XT ...

Page 6

... Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 790 795 800 805 Wavelength [nm] 1.0 Tth = –10 C 0.8 0.6 0.4 0.2 810 815 820 1.0 Tth = 25 C 0.8 0.6 0.4 0.2 810 815 820 – 6 – Tth = 0 C 790 795 800 805 810 Wavelength [nm] Tth = 30 C 790 795 800 805 810 Wavelength [nm] SLD323XT 815 820 815 820 ...

Page 7

... LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation AVOID EXPOSURE 6-7-35 Kitashinagawa, Laser radiation is Shinagawa-ku,Tokyo OVER 1 W emitted from this 600 - 950 nm 141-0001 Japan aperture. – 7 – SLD323XT LASER DIODE ...

Page 8

... Package Outline Unit – 3.0 4 – R1.2 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M-273 (LO-10) + 0.05 33.0 0.05 0 Window 5.0 Glass 0.3 38.0 0.5 19.0 LD Chip 28.0 0.5 16.5 Distance between pilot hole and emittng area PACKAGE STRUCTURE M-273(LO-10) PACKAGE MASS – 8 – 8 – 0.6 2.54 0.1 43g Sony Corporation SLD323XT ...

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